Van der Waals polarity-engineered 3D integration of 2D complementary logic
文献类型：期刊论文
| 作者 | Guo, Yimeng1,2; Li, Jiangxu1; Zhan, Xuepeng3; Wang, Chunwen4,5; Li, Min6,7; Zhang, Biao8,9; Wang, Zirui10; Liu, Yueyang11; Yang, Kaining12,13; Wang, Hai3 |
| 刊名 | NATURE
 |
| 出版日期 | 2024-05-29 |
| 页码 | 18 |
| ISSN号 | 0028-0836 |
| DOI | 10.1038/s41586-024-07438-5 |
| 通讯作者 | Li, Xiuyan(xyli@imr.ac.cn) ; Hou, Yanglong(hou@pku.edu.cn) ; Zhou, Wu(wuzhou@ucas.ac.cn) ; Wang, Hanwen(hwwang@lam.ln.cn) ; Han, Zheng(vitto.han@gmail.com) |
| 英文摘要 | Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis 1-3 . Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures 4,5 , as well as hetero-2D layers with different carrier types 6-8 , have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17 ) and MoS2 (refs. 11,18-28 )) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates. We develop a method for high-density vertical stacking of active-device multi-layers, implementing memory and logic functions, using unique VIP-FETs where a van der Waals intercalation layer modulates the p- or n-type nature of the FETs. |
| 资助项目 | National Key R&D Program of China[2022YFA1203903] ; National Key R&D Program of China[2023YFF1500600] ; National Key R&D Program of China[2019YFA0307800] ; National Key R&D Program of China[2022YFA1203902] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[12250007] ; National Natural Science Foundation of China (NSFC)[12034011] ; National Natural Science Foundation of China (NSFC)[U23A6004] ; National Natural Science Foundation of China (NSFC)[92263203] ; National Natural Science Foundation of China (NSFC)[52188101] ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology[2021ZD0302003] ; Electron Microscopy Center at the University of Chinese Academy of Sciences ; JSPS KAKENHI[20H00354] ; JSPS KAKENHI[23H02052] ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; Beijing Outstanding Young Scientist Program[BJJWZYJH01201914430039] ; CAS Project for Young Scientists in Basic Research[YSBR-003] ; Science and Technology Commission of the Shanghai Municipality[21JC1405100] |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:001262413200016 |
| 出版者 | NATURE PORTFOLIO |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology ; Electron Microscopy Center at the University of Chinese Academy of Sciences ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; Beijing Outstanding Young Scientist Program ; CAS Project for Young Scientists in Basic Research ; Science and Technology Commission of the Shanghai Municipality |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Li, Xiuyan; Hou, Yanglong; Zhou, Wu; Wang, Hanwen; Han, Zheng |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Anhui, Peoples R China 3.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao, Peoples R China 4.Univ Chinese Acad Sci, Sch Phys Sci, Beijing, Peoples R China 5.Univ Chinese Acad Sci, CAS Key Lab Vacuum Phys, Beijing, Peoples R China 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 7.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai, Peoples R China 8.Sun Yat Sen Univ, Sch Mat, Shenzhen Campus, Shenzhen, Peoples R China 9.Peking Univ, Sch Mat Sci & Engn, Beijing Key Lab Magnetoelect Mat & Devices, Beijing, Peoples R China 10.Peking Univ, Sch Integrated Circuits, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Yimeng,Li, Jiangxu,Zhan, Xuepeng,et al. Van der Waals polarity-engineered 3D integration of 2D complementary logic[J]. NATURE,2024:18. |
| APA | Guo, Yimeng.,Li, Jiangxu.,Zhan, Xuepeng.,Wang, Chunwen.,Li, Min.,...&Han, Zheng.(2024).Van der Waals polarity-engineered 3D integration of 2D complementary logic.NATURE,18. |
| MLA | Guo, Yimeng,et al."Van der Waals polarity-engineered 3D integration of 2D complementary logic".NATURE (2024):18. |
入库方式： OAI收割
来源：金属研究所
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