Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4
文献类型：期刊论文
| 作者 | Ali, Muhammad1,2; Han, Fuzhou1,2; Guo, Wenbin1,2; Ren, Jie1,2; Hu, Jianan1,2; Wang, Qichen1,2; Zhang, Yingdong1,2; Yuan, Fusen1,2; Li, Geping2 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2024-10-05 |
| 卷号 | 1001页码:9 |
| 关键词 | Modified Zircaloy-4 Stacking faults Antiphase boundary Transmission electron microscopy Zr 5 Ge 4 second phase precipitate |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2024.175196 |
| 通讯作者 | Han, Fuzhou(fzhan16s@imr.ac.cn) ; Li, Geping(gpli@imr.ac.cn) |
| 英文摘要 | Secondary phase precipitates are vital to control mechanical, corrosion and irradiation response of the multiphase alloy systems. This work reports the mechanical response of an ordered complex intermetallic Zr5Ge4 precipitate during hot working of the experimental Zircaloy-4 modified with dilute Ge addition. Atomic scale insight is provided into the formation mechanism of straight and circular stacking faults and shear antiphase boundary in Zr5Ge4 precipitate. Two types of stacking faults, having displacement vectors 1/3[100] and 1/3 [110] with small components along the c-axis, come across and form a distinct region on the (001) surface composed of a zigzag atomic arrangement different from the parent crystal. Besides this, a shear antiphase boundary along the Zr5Ge4/fcc-Zr interface is analysed and concomitant generation of nanotwins is evidenced by the streaking effect in the associated fast Fourier transform (FFT) pattern. By analysing the distortion and stacking faults in the surrounding fcc-Zr phase, comments are made on the role of external stresses in generating the aforementioned planar defects. The relative activity of two types of displacement vectors observed in Zr5Ge4 precipitate is discussed on the basis of the nature of the atomic bond. |
| 资助项目 | CAS-TWAS President Fellowship ; Special Research Assistant Project of the Chinese Academy of Sciences[E355A201] |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001258529500001 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | CAS-TWAS President Fellowship ; Special Research Assistant Project of the Chinese Academy of Sciences |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Han, Fuzhou; Li, Geping |
| 作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ali, Muhammad,Han, Fuzhou,Guo, Wenbin,et al. Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2024,1001:9. |
| APA | Ali, Muhammad.,Han, Fuzhou.,Guo, Wenbin.,Ren, Jie.,Hu, Jianan.,...&Li, Geping.(2024).Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4.JOURNAL OF ALLOYS AND COMPOUNDS,1001,9. |
| MLA | Ali, Muhammad,et al."Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4".JOURNAL OF ALLOYS AND COMPOUNDS 1001(2024):9. |
入库方式： OAI收割
来源：金属研究所
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