Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures
文献类型：期刊论文
| 作者 | Wang, Anran1; Wu, Xingguang2; Zhao, Siwen2; Han, Zheng Vitto3; Shi, Yi1; Cerullo, Giulio4,5; Wang, Fengqiu1 |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2024-07-18 |
| 卷号 | 16期号:28页码:13687-13693 |
| ISSN号 | 2040-3364 |
| DOI | 10.1039/d4nr01982b |
| 通讯作者 | Wang, Fengqiu(fwang@nju.edu.cn) |
| 英文摘要 | Van der Waals heterostructures based on transition metal dichalcogenides (TMDs) have emerged as excellent candidates for next-generation optoelectronics and valleytronics, due to their fascinating physical properties. The understanding and active control of the relaxation dynamics of heterostructures play a crucial role in device design and optimization. Here, we investigate the back-gate modulation of exciton dynamics in a WS2/WSe2 heterostructure by combining time-resolved photoluminescence (TRPL) and transient absorption spectroscopy (TAS) at cryogenic temperatures. We find that the non-radiative relaxation lifetimes of photocarriers in heterostructures can be electrically controlled for samples with different twist-angles, whereas such lifetime tuning is not present in standalone monolayers. We attribute such an observation to doping-controlled competition between interlayer and intralayer recombination pathways in high-quality WS2/WSe2 samples. The simultaneous measurement of TRPL and TAS lifetimes within the same sample provides additional insight into the influence of coexisting excitons and background carriers on the photo-response, and points to the potential of tailoring light-matter interactions in TMD heterostructures. |
| 资助项目 | National Key Research and Development Program of China[2022YFA1204303] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001263206500001 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 资助机构 | National Key Research and Development Program of China |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, Fengqiu |
| 作者单位 | 1.Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 4.Politecn Milan, Dipartimento Fis, Piazza Leonardo Vinci 32, I-20133 Milan, Italy 5.CNR, Ist Foton & Nanotecnol IFN, Piazza Leonardo Vinci 32, I-20133 Milan, Italy |
| 推荐引用方式 GB/T 7714 | Wang, Anran,Wu, Xingguang,Zhao, Siwen,et al. Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures[J]. NANOSCALE,2024,16(28):13687-13693. |
| APA | Wang, Anran.,Wu, Xingguang.,Zhao, Siwen.,Han, Zheng Vitto.,Shi, Yi.,...&Wang, Fengqiu.(2024).Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures.NANOSCALE,16(28),13687-13693. |
| MLA | Wang, Anran,et al."Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures".NANOSCALE 16.28(2024):13687-13693. |
入库方式： OAI收割
来源：金属研究所
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