A hot-emitter transistor based on stimulated emission of heated carriers
文献类型：期刊论文
| 作者 | Liu, Chi1,2; Wang, Xin-Zhe1,2; Shen, Cong3; Ma, Lai-Peng1,2; Yang, Xu-Qi1,2; Kong, Yue1,2; Ma, Wei1,2; Liang, Yan1,2; Feng, Shun1,2; Wang, Xiao-Yue1,2 |
| 刊名 | NATURE
 |
| 出版日期 | 2024-08-14 |
| 页码 | 18 |
| ISSN号 | 0028-0836 |
| DOI | 10.1038/s41586-024-07785-3 |
| 通讯作者 | Liu, Chi(chiliu@imr.ac.cn) ; Zhang, Li-Ning(eelnzhang@pku.edu.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn) |
| 英文摘要 | Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies1-5. However, the traditional mechanisms of hot-carrier generation are either carrier injection6-11 or acceleration12,13, which limit device performance in terms of power consumption and negative differential resistance14-17. Mixed-dimensional devices, which combine bulk and low-dimensional materials, can offer different mechanisms for hot-carrier generation by leveraging the diverse potential barriers formed by energy-band combinations18-21. Here we report a hot-emitter transistor based on double mixed-dimensional graphene/germanium Schottky junctions that uses stimulated emission of heated carriers to achieve a subthreshold swing lower than 1 millivolt per decade beyond the Boltzmann limit and a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with a high inverter gain and reconfigurable logic states are further demonstrated. This work reports a multifunctional hot-emitter transistor with significant potential for low-power and negative-differential-resistance applications, marking a promising advancement for the post-Moore era. A mixed-dimensional hot-emitter transistor based on mixed-dimensional graphene/germanium Schottky junctions uses stimulated emission of heated carriers, achieving an ultralow subthreshold swing and a high negative differential resistance. |
| 资助项目 | National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[62125406] ; National Natural Science Foundation of China[52272051] ; National Natural Science Foundation of China[T2293703] ; Excellent Youth Foundation of Liaoning[2023JH3/10200003] ; National Key Research and Development Program of China[2021YFA1200013] |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:001300534300014 |
| 出版者 | NATURE PORTFOLIO |
| 资助机构 | National Natural Science Foundation of China ; Excellent Youth Foundation of Liaoning ; National Key Research and Development Program of China |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Chi; Zhang, Li-Ning; Sun, Dong-Ming |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang, Peoples R China 3.Peking Univ, Sch Elect & Comp Engn, Shenzhen, Peoples R China 4.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Chi,Wang, Xin-Zhe,Shen, Cong,et al. A hot-emitter transistor based on stimulated emission of heated carriers[J]. NATURE,2024:18. |
| APA | Liu, Chi.,Wang, Xin-Zhe.,Shen, Cong.,Ma, Lai-Peng.,Yang, Xu-Qi.,...&Cheng, Hui-Ming.(2024).A hot-emitter transistor based on stimulated emission of heated carriers.NATURE,18. |
| MLA | Liu, Chi,et al."A hot-emitter transistor based on stimulated emission of heated carriers".NATURE (2024):18. |
入库方式： OAI收割
来源：金属研究所
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