Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb0.90Mn6Ge3.25Ga0.39 single crystal
文献类型：期刊论文
| 作者 | Lv, Bodong1,2; Zhong, Rui1,2; Luo, Xiaohua1,2; Ma, Shengcan1,2,3; Chen, Changcai1,2; Wang, Sujuan1,2; Luo, Qing1,2,3; Gao, Fei4,5; Fang, Chunsheng1,2; Ren, Weijun4 |
| 刊名 | SCRIPTA MATERIALIA
 |
| 出版日期 | 2025-01-15 |
| 卷号 | 255页码:6 |
| 关键词 | Kagome lattice Anomalous Hall effect Topological Hall effect Berry curvature |
| ISSN号 | 1359-6462 |
| DOI | 10.1016/j.scriptamat.2024.116345 |
| 通讯作者 | Luo, Xiaohua(xhluo2018@jxust.edu.cn) ; Ma, Shengcan(mashengcan@jxust.edu.cn) |
| 英文摘要 | Kagome lattice, made of corner-sharing triangles, provides an excellent platform for hosting exotic topological quantum phases. Here, we report the observation of large anomalous Hall effect and topological Hall effect in the Kagome lattice material Yb(0.90)Mn(6)Ge(3.25)Ga(0.3)9 single crystal. Compared to the antiferromagnetic pristine compound YbMn6Ge6, Yb0.90Mn6Ge3.25Ga0.39 has an easy plane ferromagnetic structure below 361 K and presents a spin-reorientation transition at 218 K. An intrinsic anomalous Hall conductivity with the value of 604.2 Omega(-1)center dot cm(-1) is obtained in Yb(0.90)Mn(6)Ge(3.25)Ga(0.3)9, which is the largest in RMn6X6 (X = Ge and Sn) family. Besides, a remarkable topological Hall signal is also observed near room temperature. The topological Hall resistivity of Yb0.90Mn6Ge3.25Ga0.39 is determined to be -1.86 mu Omega center dot cm at 280 K under mu H-0 = 0.3 T. Our results indicate that Yb0.90Mn6Ge3.25Ga0.39 may be an excellent platform to study the relationship between the magnetic and electronic structure and to explore novel quantum phenomenon. |
| 资助项目 | National Nature Science Foundation of China[52101223] ; National Nature Science Foundation of China[52061014] ; National Nature Science Foundation of China[52071323] ; Jiangxi Province Key Laboratory of Magnetic Metallic Materials and Devices[2024SSY05061] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001308234000001 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Nature Science Foundation of China ; Jiangxi Province Key Laboratory of Magnetic Metallic Materials and Devices |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Luo, Xiaohua; Ma, Shengcan |
| 作者单位 | 1.Jiangxi Univ Sci & Technol, Coll Rare Earths, Jiangxi Prov Key Lab Magnet Met Mat & Devices, Ganzhou Key Lab Rare Earth Magnet Funct Mat & Phys, Ganzhou 341000, Peoples R China 2.Jiangxi Univ Sci & Technol, Natl Rare Earth Funct Mat Innovat Ctr, Ganzhou 341000, Peoples R China 3.Jiangxi Univ Sci & Technol, Fac Mat Met & Chem, Sch Mat Sci & Engn, Ganzhou 341000, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lv, Bodong,Zhong, Rui,Luo, Xiaohua,et al. Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb0.90Mn6Ge3.25Ga0.39 single crystal[J]. SCRIPTA MATERIALIA,2025,255:6. |
| APA | Lv, Bodong.,Zhong, Rui.,Luo, Xiaohua.,Ma, Shengcan.,Chen, Changcai.,...&Ren, Weijun.(2025).Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb0.90Mn6Ge3.25Ga0.39 single crystal.SCRIPTA MATERIALIA,255,6. |
| MLA | Lv, Bodong,et al."Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb0.90Mn6Ge3.25Ga0.39 single crystal".SCRIPTA MATERIALIA 255(2025):6. |
入库方式： OAI收割
来源：金属研究所
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