Valley-Polarized Topological Phases with In-Plane Magnetization
文献类型：期刊论文
| 作者 | Barik, Ranjan Kumar1; Mishra, Subhendu1; Khazaei, Mohammad2; Wang, Shiyao3; Liang, Yunye4; Sun, Yan5; Ranjbar, Ahmad6; Tan, Teck Leong7; Wang, Junjie3; Yunoki, Seiji8 |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2024-10-08 |
| 卷号 | 24期号:42页码:13213-13218 |
| 关键词 | valley polarization search rule quantum anomalousHall effect in-plane magnetization mirror symmetry topological phases |
| ISSN号 | 1530-6984 |
| DOI | 10.1021/acs.nanolett.4c03252 |
| 通讯作者 | Singh, Abhishek K.(abhishek@iisc.ac.in) |
| 英文摘要 | The coexistence of valley polarization and topology has considerably facilitated the applications of 2D materials toward valleytronics device technology. However, isolated and distinct valleys are required to observe the valley-related quantum phenomenon. Herein, we report a new mechanism to generate in-plane magnetization direction-dependent isolated valley carriers by preserving or breaking the mirror symmetry in a 2D system. First-principle calculations are carried out on a prototype material, W2MnC2O2 MXene, to demonstrate the mechanism. A valley-coupled topological phase transition among Weyl semimetal, valley-polarized quantum anomalous Hall insulator, and topological semimetal is observed by manipulating the in-plane magnetization directions in W2MnC2O2. Monte Carlo simulations of W2MnC2O2 show that the estimated Curie temperature is around 170 K, indicating the possibility of observing valley-polarized topological states at higher temperatures. Our finding provides a generalized platform for investigating the valley and topological physics, which is extremely important for future quantum information processing applications. |
| 资助项目 | Institute of Eminence (IoE) scheme of The Ministry of Human Resource Development, Government of India ; DST-Nanomission program of the Department of Science and Technology, Government of India[DST/NM/TUE/QM-1/2019] ; Iran National Science Foundation (INSF)[4025794] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001331390900001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | Institute of Eminence (IoE) scheme of The Ministry of Human Resource Development, Government of India ; DST-Nanomission program of the Department of Science and Technology, Government of India ; Iran National Science Foundation (INSF) |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Singh, Abhishek K. |
| 作者单位 | 1.Indian Inst Sci, Mat Res Ctr, Bangalore 560012, India 2.Univ Tehran, Dept Phys, Tehran, Iran 3.Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China 4.Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 6.Tech Univ Dresden, Dresden Ctr Computat Mat Sci DCMS, D-01062 Dresden, Germany 7.ASTAR, Inst High Performance Comp IHPC, Singapore 138632, Singapore 8.RIKEN Ctr Computat Sci R CCS, Computat Mat Sci Res Team, Kobe, Hyogo 6500047, Japan 9.Yokohama Natl Univ, Dept Phys, Yokohama 2408501, Japan 10.Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai 9808579, Japan |
| 推荐引用方式 GB/T 7714 | Barik, Ranjan Kumar,Mishra, Subhendu,Khazaei, Mohammad,et al. Valley-Polarized Topological Phases with In-Plane Magnetization[J]. NANO LETTERS,2024,24(42):13213-13218. |
| APA | Barik, Ranjan Kumar.,Mishra, Subhendu.,Khazaei, Mohammad.,Wang, Shiyao.,Liang, Yunye.,...&Singh, Abhishek K..(2024).Valley-Polarized Topological Phases with In-Plane Magnetization.NANO LETTERS,24(42),13213-13218. |
| MLA | Barik, Ranjan Kumar,et al."Valley-Polarized Topological Phases with In-Plane Magnetization".NANO LETTERS 24.42(2024):13213-13218. |
入库方式： OAI收割
来源：金属研究所
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