Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals
文献类型：期刊论文
| 作者 | Li, Hui1,2; Xu, Chuan1,2; Liu, Zhibo1,2; Zhou, Tianya1; Tong, Jinmeng1,2; Wang, Qiang1,2; Liu, Xuanya1,2; Jin, Qianqian3; Cheng, Hui-Ming1,4; Ren, Wencai1,2 |
| 刊名 | ACS NANO
 |
| 出版日期 | 2024-10-28 |
| 卷号 | 18期号:45页码:31014-31020 |
| 关键词 | alpha-CaCr2O4 2Dcrystal unit-cell thickness high-k insulator chemical vapor deposition |
| ISSN号 | 1936-0851 |
| DOI | 10.1021/acsnano.4c07032 |
| 通讯作者 | Ren, Wencai(wcren@imr.ac.cn) |
| 英文摘要 | High-dielectric-constant (high-k) insulators are indispensable components to integrate semiconductors into metal-oxide-semiconductor field-effect transistors with sub-10 nm channel length, where the equivalent oxide thickness (EOT) of high-k insulator needs to be decreased to subnanometer scale. The traditional insulators, including Al2O3, SiO2, and HfO2, fit well with the existing silicon industry but suffer from serious degeneration of insulating properties, such as large leakage currents caused by high-density borders and interface traps, when their thicknesses are reduced to a few nanometers. Here, we synthesize a high-quality nonlayered ultrathin alpha-CaCr2O4 crystal down to unit-cell thickness (similar to 1.2 nm) by an elements slow-supply chemical vapor deposition (CVD) method. The unit-cell-thick alpha-CaCr2O4 crystals show a super high dielectric constant of 87.34, which is over 20 times higher than that of well-known layered insulator h-BN and corresponds to an EOT below 1 nm. Furthermore, it has a high breaking strength (39 GPa) and excellent stability. This strategy can also be used to fabricate other ultrathin ternary oxides, such as high-k ultrathin FeNb2O6 crystals, demonstrating the universality of the CVD method. |
| 资助项目 | National Natural Science Foundation of China[52188101] ; National Natural Science Foundation of China[52122202] ; National Natural Science Foundation of China[52272050] ; National Natural Science Foundation of China[ZDBS-LY-JSC027] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[XLYC2201003] ; LiaoNing Revitalization Talents Program[2019000178] ; Institute of Metal Research, Chinese Academy of Sciences[2021000185] ; Youth Innovation Promotion Association CAS[2024010859-JH6/1006] ; Special Projects of the Central Government in Guidance of Local Science and Technology Development[2020B0301030002] ; Guangdong Basic and Applied Basic Research Foundation |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001344643600001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Institute of Metal Research, Chinese Academy of Sciences ; Youth Innovation Promotion Association CAS ; Special Projects of the Central Government in Guidance of Local Science and Technology Development ; Guangdong Basic and Applied Basic Research Foundation |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ren, Wencai |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Guangxi Univ Sci & Technol, Ctr Struct Adv Matter, Sch Elect Engn, Liuzhou 545006, Peoples R China 4.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, Fac Mat Sci & Energy Engn, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Hui,Xu, Chuan,Liu, Zhibo,et al. Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals[J]. ACS NANO,2024,18(45):31014-31020. |
| APA | Li, Hui.,Xu, Chuan.,Liu, Zhibo.,Zhou, Tianya.,Tong, Jinmeng.,...&Ren, Wencai.(2024).Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals.ACS NANO,18(45),31014-31020. |
| MLA | Li, Hui,et al."Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals".ACS NANO 18.45(2024):31014-31020. |
入库方式： OAI收割
来源：金属研究所
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