Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors
文献类型：期刊论文
| 作者 | Zhao, Siwen1; Huang, Jinqiang2,3; Crepel, Valentin4; Xiong, Zhiren5,6; Wu, Xingguang5,6; Zhang, Tongyao5,6; Wang, Hanwen1; Han, Xiangyan7; Li, Zhengyu8; Xi, Chuanying8 |
| 刊名 | NATURE ELECTRONICS
 |
| 出版日期 | 2024-10-30 |
| 页码 | 9 |
| ISSN号 | 2520-1131 |
| DOI | 10.1038/s41928-024-01274-1 |
| 通讯作者 | Zhang, Jing(jzhang74@sxu.edu.cn) ; Wang, Ning(phwang@ust.hk) ; Lu, Jianming(jmlu@pku.edu.cn) ; Regnault, Nicolas(nicolas.regnault@phys.ens.fr) ; Han, Zheng Vitto(vitto.han@gmail.com) |
| 英文摘要 | Transistors based on semiconducting transition metal dichalcogenides can, in theory, offer high carrier mobilities, strong spin-orbit coupling and inherently strong electronic interactions at the quantum ground states. This makes them well suited for use in nanoelectronics at low temperatures. However, creating robust ohmic contacts to transition metal dichalcogenide layers at cryogenic temperatures is difficult. As a result, it is not possible to reach the quantum limit at which the Fermi level is close to the band edge and thus probe electron correlations in the fractionally filled Landau-level regime. Here we show that ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique. We observe field-effect mobilities of over 100,000 cm2 V-1 s-1 and quantum mobilities of over 3,000 cm2 V-1 s-1 in the conduction band at low temperatures. We also report evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide. Ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique, which leads to evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide devices. |
| 资助项目 | National Natural Science Foundation of China (National Science Foundation of China)[2022YFA1203903] ; National Natural Science Foundation of China (National Science Foundation of China)[2023YFF1500600] ; National Natural Science Foundation of China (National Science Foundation of China)[2021YFA1400100] ; National Key R&D Program of China[92265203] ; National Key R&D Program of China[12104462] ; National Key R&D Program of China[11974357] ; National Key R&D Program of China[U1932151] ; National Key R&D Program of China[12204287] ; National Key R&D Program of China[11974027] ; National Natural Science Foundation of China (NSFC) ; Fund for Shanxi '1331 Project' Key Subjects Construction[2021ZD0302003] ; Innovation Program for Quantum Science and Technology[AoE/P-701/20] ; Hong Kong Research Grants Council[Z190011] ; Beijing Natural Science Foundation[20H00354] ; Beijing Natural Science Foundation[21H05233] ; Beijing Natural Science Foundation[23H02052] ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; QuantERA II Programme[101017733] ; European Union[101020833] ; European Research Council (ERC) under the European Union ; Simons Foundation[866365] ; European Union's Horizon 2020 research and innovation programme under the ERC ; High Magnetic Field Laboratory of Anhui Province |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001347519600001 |
| 出版者 | NATURE PORTFOLIO |
| 资助机构 | National Natural Science Foundation of China (National Science Foundation of China) ; National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Fund for Shanxi '1331 Project' Key Subjects Construction ; Innovation Program for Quantum Science and Technology ; Hong Kong Research Grants Council ; Beijing Natural Science Foundation ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; QuantERA II Programme ; European Union ; European Research Council (ERC) under the European Union ; Simons Foundation ; European Union's Horizon 2020 research and innovation programme under the ERC ; High Magnetic Field Laboratory of Anhui Province |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, Jing; Wang, Ning; Lu, Jianming; Regnault, Nicolas; Han, Zheng Vitto |
| 作者单位 | 1.Liaoning Acad Mat, Shenyang, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 3.Anhui Univ Sci & Technol, Sch Mat & Sci Engn, Hefei, Anhui, Peoples R China 4.Flatiron Inst, Ctr Computat Quantum Phys, New York, NY USA 5.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China 6.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China 7.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China 8.Chinese Acad Sci, Anhui Key Lab Low Energy Quantum Mat & Devices, High Magnet Field Lab, HFIPS, Hefei, Peoples R China 9.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing, Peoples R China 10.Chinese Acad Sci, Inst Phys, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Siwen,Huang, Jinqiang,Crepel, Valentin,et al. Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors[J]. NATURE ELECTRONICS,2024:9. |
| APA | Zhao, Siwen.,Huang, Jinqiang.,Crepel, Valentin.,Xiong, Zhiren.,Wu, Xingguang.,...&Han, Zheng Vitto.(2024).Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors.NATURE ELECTRONICS,9. |
| MLA | Zhao, Siwen,et al."Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors".NATURE ELECTRONICS (2024):9. |
入库方式： OAI收割
来源：金属研究所
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