Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates
文献类型：期刊论文
| 作者 | Li, Tingting1,2; Shi, Xudong1,2; Li, Mingze1,2; Gao, Xuan P. A.3; Wang, Zhenhua1,2; Zhang, Zhidong1 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2025-09-20 |
| 卷号 | 230页码:236-243 |
| 关键词 | Topological insulators Non-saturating linear magnetoresistance (LMR) Weak antilocalization (WAL) Nonlinear Hall resistance Ambipolar field effect |
| ISSN号 | 1005-0302 |
| DOI | 10.1016/j.jmst.2024.12.064 |
| 通讯作者 | Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn) |
| 英文摘要 | We report a systematic study on the transport properties of (Bi0.2Sb0.8)2Te3 and (Bi0.4Sb0.6)2Te3 nanoplates with a thickness of about 6 nm grown by chemical vapor deposition (CVD) on Si/SiO2 substrate. We achieve a significant ambipolar field effect in the two samples with different compositions by applying back-gate voltage, successfully tuning the Fermi level across the Dirac point of surface states. It is found that the Hall resistance exhibits strong non-linear behavior and magnetic field induced sign change of the slope when the Fermi level is near the Dirac point, indicating the coexistence of n-type and p-type carriers. Moreover, this coincides with the striking crossover from weak antilocalization (WAL) to linear magnetoresistance (LMR). These gate and temperature dependent magneto-transport studies provide a deeper insight into the nature of LMR and WAL in topological materials. (c) 2025 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | National Natu-ral Science Foundation of China[52201233] ; National Natu-ral Science Foundation of China[52371204] ; National Natu-ral Science Foundation of China[52031014] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001444373400001 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natu-ral Science Foundation of China |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Li, Mingze; Wang, Zhenhua |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA |
| 推荐引用方式 GB/T 7714 | Li, Tingting,Shi, Xudong,Li, Mingze,et al. Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2025,230:236-243. |
| APA | Li, Tingting,Shi, Xudong,Li, Mingze,Gao, Xuan P. A.,Wang, Zhenhua,&Zhang, Zhidong.(2025).Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,230,236-243. |
| MLA | Li, Tingting,et al."Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 230(2025):236-243. |
入库方式： OAI收割
来源：金属研究所
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