SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory
文献类型：期刊论文
| 作者 | Guo, Zi-Long2; Chang, Liang2; Liu, Jian-Wei2; Tan, Hai-Ning3; Zhou, Jing2; Wu, Qiang1 |
| 刊名 | JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2025-11-01 |
| 卷号 | 40期号:6页码:1530-1545 |
| 关键词 | embedded nonvolatile memory endurance wear-leveling resistive random access memory magnetic random access memory |
| ISSN号 | 1000-9000 |
| DOI | 10.1007/s11390-024-4251-9 |
| 英文摘要 | Emerging non-volatile memories (NVMs), including resistive random-access memory (RRAM) and magnetic random-access memory (MRAM), have been promising solutions for intelligent embedded systems. With the non-volatility and low leakage power consumption, the industry-based embedded NVMs can be used to develop energy-efficient artificial intelligent processors. However, industry-based NVMs typically have low endurance with only 104 to 106 maximum write times, shortening the lifetime of embedded systems. In addition, non-uniform write distribution to physical addresses onto NVMs may further reduce system lifetime. Furthermore, several intentional attacks, such as malicious writing, may impair embedded NVMs. In this paper, we present a novel wear-leveling technique based on row-column data movement, SENTRY, to extend system lifetime. We explore industry-based embedded NVM chips and analyze practical data distributions of several tasks. We design a coordinate system based moving method with negligible storage overhead for more efficient data movement. The experiment shows that SENTRY achieves a 96.07% life utilization rate with 1.47% data movement overhead. In addition, SENTRY increases the endurance margin of memory by 6 048x compared with an unprotected baseline (without SENTRY) under malicious address attacks. |
| 资助项目 | National Natural Science Foundation of China[62104025] ; State Key Laboratory of Computer Architecture[CARCHB202117] ; State Key Laboratory of Computer Architecture[CLQ202305] |
| WOS研究方向 | Computer Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001663947600011 |
| 出版者 | SPRINGER SINGAPORE PTE LTD |
| 源URL | [http://119.78.100.204/handle/2XEOYT63/42877]  |
| 专题 | 中国科学院计算技术研究所 |
| 通讯作者 | Chang, Liang; Tan, Hai-Ning |
| 作者单位 | 1.Nanjing Houmo Technol Co Ltd, Nanjing 210038, Peoples R China 2.Univ Elect Sci & Technol China, Sch Informat & Commun Engn, Chengdu 611731, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Zi-Long,Chang, Liang,Liu, Jian-Wei,et al. SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory[J]. JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY,2025,40(6):1530-1545. |
| APA | Guo, Zi-Long,Chang, Liang,Liu, Jian-Wei,Tan, Hai-Ning,Zhou, Jing,&Wu, Qiang.(2025).SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory.JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY,40(6),1530-1545. |
| MLA | Guo, Zi-Long,et al."SENTRY: Lifetime Secure Technique for Industry Embedded Non-Volatile Random-Access Memory".JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY 40.6(2025):1530-1545. |
入库方式： OAI收割
来源：计算技术研究所
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