Room-Temperature Ferromagnetism in Ti-Doped AlN Film
文献类型：期刊论文
| 作者 | Ren Yinshuan; Pan Dong; Jian Jikang; Jiang Xiaokang; Li Jin; Sun Yanfei; Wu Rong |
| 刊名 | INTEGRATED FERROELECTRICS
 |
| 出版日期 | 2013 |
| 卷号 | 146期号:1页码:154-160 |
| ISSN号 | 1058-4587 |
| 关键词 | Radio frequency reactive sputtering AlN film Ti doping diluted magnetic semiconductor |
| 中文摘要 | AlN film doped with 1.2 at.% Titanium (Ti) was successfully prepared on a silicon (100) substrate by radio frequency reactive sputtering. X-ray diffractometry (XRD) analysis clearly showed that the (002) peak position of the AlN:Ti film slightly shifted to higher angles compared with pure AlN, while the crystal structure of sample was maintained. The rocking curve results revealed that the deposited films have a good crystalline quality. X-ray photoelectron spectroscopes (XPS) proved that Ti atoms were successfully incorporated into AlN without forming any secondary phase. Atomic force microscopy (AFM) revealed the doped film sample possess smooth surface and homogeneous grain size with a root mean square roughness (RMS) value of 1.49nm. The magnetization versus magnetic field (M-H) curves indicated the Ti-doped AlN films exhibited room temperature ferromagnetism. The saturation magnetizations (Ms) and coercive fields (Hc) obtained at 300K were about 9.82 x 10(-6) emu and 75 Oe, respectively. The results reveal that Ti is a potential dopant for preparing diluted magnetic semiconductors film. |
| 学科主题 | Engineering ; Physics |
| 资助信息 | National Natural Science Foundation of China 10864004, 50862008, 11164026; China Postdoctoral Science Foundation 20100471679, 201104704; "Western Light Joint Scholar Foundation" Program of Chinese Academy of Sciences LHXZ200902 |
| 收录类别 | SCI |
| 公开日期 | 2013-11-07 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/2693]  |
| 专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 |
| 作者单位 | Xinjiang Univ, Dept Phys Sci & Technol, Urumqi 830046, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ren Yinshuan,Pan Dong,Jian Jikang,et al. Room-Temperature Ferromagnetism in Ti-Doped AlN Film[J]. INTEGRATED FERROELECTRICS,2013,146(1):154-160. |
| APA | Ren Yinshuan.,Pan Dong.,Jian Jikang.,Jiang Xiaokang.,Li Jin.,...&Wu Rong.(2013).Room-Temperature Ferromagnetism in Ti-Doped AlN Film.INTEGRATED FERROELECTRICS,146(1),154-160. |
| MLA | Ren Yinshuan,et al."Room-Temperature Ferromagnetism in Ti-Doped AlN Film".INTEGRATED FERROELECTRICS 146.1(2013):154-160. |
入库方式： OAI收割
来源：新疆理化技术研究所
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