Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors
文献类型：期刊论文
| 作者 | Wu Xue; Lu Wu ; Wang Xin; Xi Shan-Bin; Guo Qi; Li Yu-Dong
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2013 |
| 卷号 | 62期号:13 |
| 关键词 | 0.18 mu m narrow-channel NMOS transistor 60Co gamma RINCE |
| ISSN号 | 1000-3290 |
| 英文摘要 | This paper describes the total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors which are exposed to a gamma-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors-the effect we call radiation induced narrow channel effect(RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| WOS记录号 | WOS:000322566300056 |
| 公开日期 | 2013-11-07 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/2703]  |
| 专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumq 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu Xue,Lu Wu,Wang Xin,et al. Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors[J]. ACTA PHYSICA SINICA,2013,62(13). |
| APA | Wu Xue,Lu Wu,Wang Xin,Xi Shan-Bin,Guo Qi,&Li Yu-Dong.(2013).Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors.ACTA PHYSICA SINICA,62(13). |
| MLA | Wu Xue,et al."Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors".ACTA PHYSICA SINICA 62.13(2013). |
入库方式： OAI收割
来源：新疆理化技术研究所
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