3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
文献类型：期刊论文
| 作者 | Zhang Jin-Xin; Guo Hong-Xia; Guo Qi ; Wen Lin; Cui Jiang-Wei; Xi Shan-Bin; Wang Xin; Deng Wei
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2013 |
| 卷号 | 62期号:4页码:- |
| 关键词 | SiGe heterojunction bipolar transistor single event effect charge collection three-dimensional numerical simulation |
| ISSN号 | 1000-3290 |
| 中文摘要 | In this paper, we establish a three-dimensional numerical simulation model for SiGe heterojunction bipolar transistor by the technology computer aided design simulations. In the simulation we investigate the charge collection mechanism by heavy ion radiation in SiGe HBT technology. The results show that the charge collected by the terminals is a strong function of the ion striking position. The sensitive area of charge collection for each terminal is identified based on the analyses of the device structure and simulation results. For a normal strike within and around the area of the collector/substrate junction, most of the electrons and holes are collected by the collector and substrate terminals, respectively. For an ion strike between the shallow trench edges surrounding the emitter, the base collects a large quantity of charge, while the emitter collects a negligible quantity of charge. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China 61274106 |
| 公开日期 | 2013-11-07 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/2707]  |
| 专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 新疆理化技术研究所_材料物理与化学研究室 固体辐射物理研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Northwest Inst Nucl Technol, Xian 710024, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang Jin-Xin,Guo Hong-Xia,Guo Qi,et al. 3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor[J]. ACTA PHYSICA SINICA,2013,62(4):-. |
| APA | Zhang Jin-Xin.,Guo Hong-Xia.,Guo Qi.,Wen Lin.,Cui Jiang-Wei.,...&Deng Wei.(2013).3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor.ACTA PHYSICA SINICA,62(4),-. |
| MLA | Zhang Jin-Xin,et al."3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor".ACTA PHYSICA SINICA 62.4(2013):-. |
入库方式： OAI收割
来源：新疆理化技术研究所
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