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High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O-3 relaxor ferroelectric thin films
文献类型：期刊论文
| 作者 | Hao Xihong; Wang Ying; Yang Jichun; An Shengli; Xu Jinbao |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 112期号:11页码:- |
| ISSN号 | 0021-8979 |
| 中文摘要 | In this work, 1-mu m-thick relaxor ferroelectric (FE) films with a typical composition of Pb0.91La0.09(Ti0.65Zr0.35)O-3 (PLZT 9/65/35) were successfully deposited on platinum-buffered silicon substrates via a sol-gel technique. The microstructure, electrical properties, and energy-storage performance of the obtained thin films were investigated in detail. X-ray diffraction (XRD) analysis and field-emission scanning electron microscopy pictures indicated that the crystallized thin films showed a random orientation with uniform and dense microstructure. Electrical measurements illustrated that the relaxor FE thin films had a considerable capacitance density of 925 nF/cm(2) at 1MHz and a higher critical breakdown field of 2177 kV/cm. As a result, a large recoverable energy-storage density of 28.7 J/cm(3) was obtained in the thin films at room temperature. Moreover, good charge-discharge endurance was also realized in the FE films, confirmed by the repeated polarizationelectric field loops. |
| 学科主题 | Physics |
| 资助信息 | National Natural Science Foundation of China 51002071; Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region; Natural Science Foundation of Inner Mongolia 2010BS0802; Xinjiang Key Laboratory of Electronic Information Materials and Devices XJYS0901-2011-01 |
| 收录类别 | SCI |
| 公开日期 | 2013-11-07 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/2747]  |
| 专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 |
| 作者单位 | Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hao Xihong,Wang Ying,Yang Jichun,et al. High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O-3 relaxor ferroelectric thin films[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):-. |
| APA | Hao Xihong,Wang Ying,Yang Jichun,An Shengli,&Xu Jinbao.(2012).High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O-3 relaxor ferroelectric thin films.JOURNAL OF APPLIED PHYSICS,112(11),-. |
| MLA | Hao Xihong,et al."High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O-3 relaxor ferroelectric thin films".JOURNAL OF APPLIED PHYSICS 112.11(2012):-. |
入库方式： OAI收割
来源：新疆理化技术研究所
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