Highly formaldehyde-sensitive, transition-metal doped ZnO nanorods prepared by plasma-enhanced chemical vapor deposition
文献类型:期刊论文
作者 | Hu, Peng1![]() ![]() |
刊名 | SENSORS AND ACTUATORS B-CHEMICAL
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出版日期 | 2012-07-05 |
卷号 | 169期号:0页码:74-80 |
关键词 | Plasma-enhanced chemical vapor deposition ZnO nanorods Transition metal dopants Formaldehyde gas sensors |
ISSN号 | 0925-4005 |
通讯作者 | Han, N |
英文摘要 | One of the challenges in realizing metal oxide semiconductor gas sensors is to enhance the sensitivity of active materials in order to respond to the low concentration of detecting gases effectively and efficiently. In this report, transition metals such as Mn. Ni, Cu, and Co are used as dopants for the synthesis of highly formaldehyde-sensitive ZnO nanorods prepared by plasma enhanced chemical vapor deposition (PECVD) method. All the doped ZnO nanorods show improved formaldehyde-sensitivity as compared to undoped ZnO nanorods, and a gas sensitivity maximum of similar to 25/ppm was obtained by using 10 mol% CdO activated 1.0 mol% Mn doped ZnO nanorods. Moreover, the ZnO nanorods have a higher sensitivity as compared to ZnO nanomaterials prepared by other methods such as precipitation and hydrothermal, which can be attributed to the abundant crystal defects induced by the dopants in a short crystallization process in this PECVD method. (C) 2012 Elsevier B.V. All rights reserved. |
WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
类目[WOS] | Chemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation |
研究领域[WOS] | Chemistry ; Electrochemistry ; Instruments & Instrumentation |
关键词[WOS] | GAS-SENSING PROPERTY ; POROUS ZNO ; ZINC-OXIDE ; THIN-FILMS ; NANOWIRE ; SENSOR ; PHOTOLUMINESCENCE ; TEMPERATURE ; SELECTIVITY ; FE |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000305719600011 |
公开日期 | 2013-10-16 |
版本 | 出版稿 |
源URL | [http://ir.ipe.ac.cn/handle/122111/3572] ![]() |
专题 | 过程工程研究所_多相复杂系统国家重点实验室 |
作者单位 | 1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 2.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Hu, Peng,Han, Ning,Zhang, Dangwen,et al. Highly formaldehyde-sensitive, transition-metal doped ZnO nanorods prepared by plasma-enhanced chemical vapor deposition[J]. SENSORS AND ACTUATORS B-CHEMICAL,2012,169(0):74-80. |
APA | Hu, Peng,Han, Ning,Zhang, Dangwen,Ho, Johnny C.,&Chen, Yunfa.(2012).Highly formaldehyde-sensitive, transition-metal doped ZnO nanorods prepared by plasma-enhanced chemical vapor deposition.SENSORS AND ACTUATORS B-CHEMICAL,169(0),74-80. |
MLA | Hu, Peng,et al."Highly formaldehyde-sensitive, transition-metal doped ZnO nanorods prepared by plasma-enhanced chemical vapor deposition".SENSORS AND ACTUATORS B-CHEMICAL 169.0(2012):74-80. |
入库方式: OAI收割
来源:过程工程研究所
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