Low-temperature purification process of metallurgical silicon
文献类型：期刊论文
| 作者 | Zhao Li-xin1,2; Wang Zhi1; Guo Zhan-cheng1,3; Li Cheng-yi4 |
| 刊名 | TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
 |
| 出版日期 | 2011-05-01 |
| 卷号 | 21期号:5页码:1185-1192 |
| 关键词 | metal liquating method metallurgical purification process tin-silicon system solar grade silicon |
| ISSN号 | 1003-6326 |
| 通讯作者 | Guo, ZC |
| 英文摘要 | The removal of B and P consumes most of heat energy in Si metallurgical purification process for solar-grade Si. Metal-liquating purification of metallurgical grade silicon (MG-Si), also called Si-recrystallization from metal liquid, was a potential energy-saving method for the removal of B and P efficiently, since Si could be melted at lower temperature by alloying with metal. The selection criteria of metal-liquating system was elaborated, and Al, Sn and In were selected out as the optimum metallic mediums. For Sn-Si system, the segregation coefficient of B decreased to 0.038 at 1 500 K, which was much less than 0.8 at the melting point of Si. The mass fraction of B was diminished from 15x10(-6) to 0.1x10(-6) as MG-Si was purified by twice, while that of most metallic elements could be decreased to 0.1x10(-6) by purifying just once. During the metal-liquating process, the formation of compounds between impurity elements and Si was also an important route of impurity removal. Finally, one low-temperature metallurgical process based on metal-liquating method was proposed. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Metallurgy & Metallurgical Engineering |
| 研究领域[WOS] | Metallurgy & Metallurgical Engineering |
| 关键词[WOS] | SOLAR-GRADE-SILICON ; LIQUID-PHASE EPITAXY ; MOLTEN SILICON ; REMOVAL ; PHOSPHORUS ; BORON ; THERMODYNAMICS ; FEEDSTOCK ; PLASMA ; CELLS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000291472500035 |
| 公开日期 | 2013-11-05 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/4868]  |
| 专题 | 过程工程研究所_湿法冶金清洁生产技术国家工程实验室 |
| 作者单位 | 1.Chinese Acad Sci, Natl Engn Lab Hydromet Cleaner Prod Technol, Inst Proc Engn, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 3.Univ Sci & Technol Beijing, State Key Lab Adv Met, Beijing 100083, Peoples R China 4.China Univ Min & Technol, Sch Chem & Environm Engn, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao Li-xin,Wang Zhi,Guo Zhan-cheng,et al. Low-temperature purification process of metallurgical silicon[J]. TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,2011,21(5):1185-1192. |
| APA | Zhao Li-xin,Wang Zhi,Guo Zhan-cheng,&Li Cheng-yi.(2011).Low-temperature purification process of metallurgical silicon.TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,21(5),1185-1192. |
| MLA | Zhao Li-xin,et al."Low-temperature purification process of metallurgical silicon".TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA 21.5(2011):1185-1192. |
入库方式： OAI收割
来源：过程工程研究所
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