Effect of boron on the surface tension of molten silicon and its temperature coefficient
文献类型：期刊论文
| 作者 | Yuan, ZF; Mukai, K |
| 刊名 | JOURNAL OF COLLOID AND INTERFACE SCIENCE
 |
| 出版日期 | 2004-02-01 |
| 卷号 | 270期号:1页码:140-145 |
| 关键词 | surface tension molten silicon boron sessile drop method oxygen partial pressure temperature coefficient |
| ISSN号 | 0021-9797 |
| 其他题名 | J. Colloid Interface Sci. |
| 中文摘要 | The influence of boron concentration (CB/mass%) on the surface tension of molten silicon has been investigated with the sessile drop method under oxygen partial pressure P-O2 = 1.62 x 10(-25)-2.63 x 10(-22) MPa, and the results can be summarized as follows. The surface tension increases with CB in the range below 2.09 mass%, and the maximum increase rate of the surface tension is about 30 mN m(-1) (mass% C-B)(-1). The temperature coefficient of the surface tension, (partial derivative(sigma)/partial derivativeT)C-B, was found to increase with the boron concentration in molten silicon. At the interface between molten silicon and the BN substrate, a discontinuous Si3N4 layer was reckoned to form and the layer might prevent BN from dissolving into the molten silicon. Since dissolved boron from the BN substrate into the molten silicon is below 0.054 mass% and the associated increase in surface tension is below 1.5 MN m(-1), the contamination from the BN substrate on the surface tension can be ignored. The relation between the surface tension and C-B indicates negative adsorption of boron and can be well described by combining the Gibbs adsorption isotherm with the Langmuir isotherm. (C) 2003 Elsevier Inc. All rights reserved. |
| 英文摘要 | The influence of boron concentration (CB/mass%) on the surface tension of molten silicon has been investigated with the sessile drop method under oxygen partial pressure P-O2 = 1.62 x 10(-25)-2.63 x 10(-22) MPa, and the results can be summarized as follows. The surface tension increases with CB in the range below 2.09 mass%, and the maximum increase rate of the surface tension is about 30 mN m(-1) (mass% C-B)(-1). The temperature coefficient of the surface tension, (partial derivative(sigma)/partial derivativeT)C-B, was found to increase with the boron concentration in molten silicon. At the interface between molten silicon and the BN substrate, a discontinuous Si3N4 layer was reckoned to form and the layer might prevent BN from dissolving into the molten silicon. Since dissolved boron from the BN substrate into the molten silicon is below 0.054 mass% and the associated increase in surface tension is below 1.5 MN m(-1), the contamination from the BN substrate on the surface tension can be ignored. The relation between the surface tension and C-B indicates negative adsorption of boron and can be well described by combining the Gibbs adsorption isotherm with the Langmuir isotherm. (C) 2003 Elsevier Inc. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Chemistry, Physical |
| 研究领域[WOS] | Chemistry |
| 关键词[WOS] | OXYGEN ; ALLOYS ; WETTABILITY |
| 收录类别 | SCI |
| 原文出处 | |
| 语种 | 英语 |
| WOS记录号 | WOS:000187883900018 |
| 公开日期 | 2013-11-05 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/4918]  |
| 专题 | 过程工程研究所_研究所（批量导入） |
| 作者单位 | 1.Chinese Acad Sci, Inst Proc Engn, Multiphase React Lab, Beijing 100080, Peoples R China 2.Kyushu Inst Technol, Fac Engn, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 8048550, Japan |
| 推荐引用方式 GB/T 7714 | Yuan, ZF,Mukai, K. Effect of boron on the surface tension of molten silicon and its temperature coefficient[J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE,2004,270(1):140-145. |
| APA | Yuan, ZF,&Mukai, K.(2004).Effect of boron on the surface tension of molten silicon and its temperature coefficient.JOURNAL OF COLLOID AND INTERFACE SCIENCE,270(1),140-145. |
| MLA | Yuan, ZF,et al."Effect of boron on the surface tension of molten silicon and its temperature coefficient".JOURNAL OF COLLOID AND INTERFACE SCIENCE 270.1(2004):140-145. |
入库方式： OAI收割
来源：过程工程研究所
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