Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM
文献类型：期刊论文
| 作者 | Xiao, JZ; Yin, ST; Shao, MJ; Zhang, XY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004-06-01 |
| 卷号 | 266期号:4页码:519-522 |
| 关键词 | crystal structure dislocation-etch pit environmental scanning electron microscopy image contrast Czochralski method sapphire |
| ISSN号 | 0022-0248 |
| 其他题名 | J. Cryst. Growth |
| 中文摘要 | The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produced by Cz method were investigated using an environmental scanning electron microscope for the first time. The clear and stable contrast images of triangular, hexagonal, and quadrilateral etch pits were observed, which demonstrate the structural symmetry of sapphire crystal along [0 0 0 1] direction. The dislocation density we measured is 1-2 x 10(5)/cm(2) and the formation of the etch pits is also discussed. (C) 2004 Elsevier B.V. All rights reserved. |
| 英文摘要 | The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produced by Cz method were investigated using an environmental scanning electron microscope for the first time. The clear and stable contrast images of triangular, hexagonal, and quadrilateral etch pits were observed, which demonstrate the structural symmetry of sapphire crystal along [0 0 0 1] direction. The dislocation density we measured is 1-2 x 10(5)/cm(2) and the formation of the etch pits is also discussed. (C) 2004 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 收录类别 | SCI |
| 原文出处 | |
| 语种 | 英语 |
| WOS记录号 | WOS:000221917400019 |
| 公开日期 | 2013-11-05 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/4980]  |
| 专题 | 过程工程研究所_研究所（批量导入） |
| 作者单位 | 1.Fudan Univ, Dept Phys, Synchrotron Radiat Res Ctr, Shanghai 200433, Peoples R China 2.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China 3.Chinese Acad Sci, Inst Chem Met, Beijing 100080, Peoples R China 4.Nanjing Univ, Solid State Microstruct Lab, Nanjing 210008, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, JZ,Yin, ST,Shao, MJ,et al. Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM[J]. JOURNAL OF CRYSTAL GROWTH,2004,266(4):519-522. |
| APA | Xiao, JZ,Yin, ST,Shao, MJ,&Zhang, XY.(2004).Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM.JOURNAL OF CRYSTAL GROWTH,266(4),519-522. |
| MLA | Xiao, JZ,et al."Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM".JOURNAL OF CRYSTAL GROWTH 266.4(2004):519-522. |
入库方式： OAI收割
来源：过程工程研究所
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