Wettability and reactivity of molten silicon with various substrates
文献类型：期刊论文
| 作者 | Yuan, Z; Huang, WL; Mukai, K |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2004-03-01 |
| 卷号 | 78期号:4页码:617-622 |
| 关键词 | liquid pure metals surface-tension oxygen solubility aluminum boron sio2 |
| ISSN号 | 0947-8396 |
| 其他题名 | Appl. Phys. A-Mater. Sci. Process. |
| 中文摘要 | Contact angles of molten silicon on various substrates have been determined using the sessile drop method and reactivity has been investigated by examining cross sections between silicon and substrates with an electron-probe microanalyzer (EPMA). The contact angles between molten silicon and oxide substrates, such as SiO2(s), Al2O3(s) and MgO(s), are in the range 85degrees to 88degrees. The reaction zone is composed of forsterite (2MgO.SiO2) and clinoenstatite (2MgO.2SiO(2)) on the MgO(s)-side of the interface between the Si and MgO. The contact angle between molten silicon and Si3N4 is about 90degrees. Molten silicon spreads over the SiC plate and the contact angle is estimated to be 8degrees. Large contact-angle values (around 145degrees) have been observed on BN substrates. At the interface between Si(l) and the BN substrate, a discontinuous Si3N4 layer is believed to form and might retard the dissolution of BN into molten silicon. The BN substrate is regarded as being the most suitable substrate for supporting a molten silicon drop during surface tension measurements, due to the large contact angle and low contamination. |
| 英文摘要 | Contact angles of molten silicon on various substrates have been determined using the sessile drop method and reactivity has been investigated by examining cross sections between silicon and substrates with an electron-probe microanalyzer (EPMA). The contact angles between molten silicon and oxide substrates, such as SiO2(s), Al2O3(s) and MgO(s), are in the range 85degrees to 88degrees. The reaction zone is composed of forsterite (2MgO.SiO2) and clinoenstatite (2MgO.2SiO(2)) on the MgO(s)-side of the interface between the Si and MgO. The contact angle between molten silicon and Si3N4 is about 90degrees. Molten silicon spreads over the SiC plate and the contact angle is estimated to be 8degrees. Large contact-angle values (around 145degrees) have been observed on BN substrates. At the interface between Si(l) and the BN substrate, a discontinuous Si3N4 layer is believed to form and might retard the dissolution of BN into molten silicon. The BN substrate is regarded as being the most suitable substrate for supporting a molten silicon drop during surface tension measurements, due to the large contact angle and low contamination. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Materials Science ; Physics |
| 关键词[WOS] | LIQUID PURE METALS ; SURFACE-TENSION ; OXYGEN SOLUBILITY ; ALUMINUM ; BORON ; SIO2 |
| 收录类别 | SCI |
| 原文出处 | |
| 语种 | 英语 |
| WOS记录号 | WOS:000188347700035 |
| 公开日期 | 2013-11-05 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/5036]  |
| 专题 | 过程工程研究所_研究所（批量导入） |
| 作者单位 | 1.Chinese Acad Sci, Inst Proc Engn, Multiphase React Lab, Beijing 100080, Peoples R China 2.Kyushu Inst Technol, Fac Engn, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 8048550, Japan |
| 推荐引用方式 GB/T 7714 | Yuan, Z,Huang, WL,Mukai, K. Wettability and reactivity of molten silicon with various substrates[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2004,78(4):617-622. |
| APA | Yuan, Z,Huang, WL,&Mukai, K.(2004).Wettability and reactivity of molten silicon with various substrates.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,78(4),617-622. |
| MLA | Yuan, Z,et al."Wettability and reactivity of molten silicon with various substrates".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 78.4(2004):617-622. |
入库方式： OAI收割
来源：过程工程研究所
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