Surface tension and its temperature coefficient of molten silicon at different oxygen potentials
文献类型：期刊论文
| 作者 | Yuan, ZF; Mukai, K; Huang, WL |
| 刊名 | LANGMUIR
 |
| 出版日期 | 2002-03-19 |
| 卷号 | 18期号:6页码:2054-2062 |
| ISSN号 | 0743-7463 |
| 关键词 | solid silica drop method alloys flow |
| 其他题名 | Langmuir |
| 中文摘要 | Previous investigations on the effects of temperature and impurities on the, surface tension of molten silicon, and relevant measurement methods have been reviewed, and the influence of oxygen partial pressure (P-O2) in the atmosphere has been analyzed emphatically, on the basis of the results obtained by the sessile drop method and calculations. In the case of P-O2 less than or equal to P-O2.(sat) (the saturated oxygen partial pressure in the Si(l)-O-2(g)-SiO2(S) system), the surface tension First remains almost constant and then decreases remarkably with the increase of P-O2, the temperature coefficient of surface tension (partial derivativesigma/partial derivativeT) is negative and increases with the oxygen partial pressure, and the molten silicon drop is very sensitive to outside vibrations, However. in the case of P-O2 > P-O2.(sat) the surface tension increases slightly with the oxygen partial pressure, partial derivativesigma/partial derivativeT is higher and also increases with P-O2 the molten silicon drop is not influenced by environmental disturbances and remains stable, and EPMA (electron probe microanalyzer) analysis indicates the formation of a thin SiO2(S) film on the surface of the molten silicon drop which might account fur the surface tension increase. |
| 英文摘要 | Previous investigations on the effects of temperature and impurities on the, surface tension of molten silicon, and relevant measurement methods have been reviewed, and the influence of oxygen partial pressure (P-O2) in the atmosphere has been analyzed emphatically, on the basis of the results obtained by the sessile drop method and calculations. In the case of P-O2 less than or equal to P-O2.(sat) (the saturated oxygen partial pressure in the Si(l)-O-2(g)-SiO2(S) system), the surface tension First remains almost constant and then decreases remarkably with the increase of P-O2, the temperature coefficient of surface tension (partial derivativesigma/partial derivativeT) is negative and increases with the oxygen partial pressure, and the molten silicon drop is very sensitive to outside vibrations, However. in the case of P-O2 > P-O2.(sat) the surface tension increases slightly with the oxygen partial pressure, partial derivativesigma/partial derivativeT is higher and also increases with P-O2 the molten silicon drop is not influenced by environmental disturbances and remains stable, and EPMA (electron probe microanalyzer) analysis indicates the formation of a thin SiO2(S) film on the surface of the molten silicon drop which might account fur the surface tension increase. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Multidisciplinary ; Chemistry, Physical ; Materials Science, Multidisciplinary |
| 研究领域[WOS] | Chemistry ; Materials Science |
| 关键词[WOS] | SOLID SILICA ; DROP METHOD ; ALLOYS ; FLOW |
| 收录类别 | SCI |
| 原文出处 | |
| 语种 | 英语 |
| WOS记录号 | WOS:000174403000017 |
| 公开日期 | 2013-11-12 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/5673]  |
| 专题 | 过程工程研究所_研究所（批量导入） |
| 作者单位 | 1.Chinese Acad Sci, Inst Proc Engn, Multi Phase React Lab, Beijing 100080, Peoples R China 2.Kyushu Inst Technol, Fac Engn, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 8048550, Japan |
| 推荐引用方式 GB/T 7714 | Yuan, ZF,Mukai, K,Huang, WL. Surface tension and its temperature coefficient of molten silicon at different oxygen potentials[J]. LANGMUIR,2002,18(6):2054-2062. |
| APA | Yuan, ZF,Mukai, K,&Huang, WL.(2002).Surface tension and its temperature coefficient of molten silicon at different oxygen potentials.LANGMUIR,18(6),2054-2062. |
| MLA | Yuan, ZF,et al."Surface tension and its temperature coefficient of molten silicon at different oxygen potentials".LANGMUIR 18.6(2002):2054-2062. |
入库方式： OAI收割
来源：过程工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。