Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
文献类型：期刊论文
| 作者 | Peng, HY ; Li, YF ; Lin, WN ; Wang, YZ ; Gao（高兴宇）, XY ; Wu, T |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2012 |
| 卷号 | 2 |
| ISSN号 | 2045-2322 |
| 英文摘要 | Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations. |
| 语种 | 英语 |
| WOS记录号 | WOS:000305283400002 |
| 公开日期 | 2013-12-05 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/13128]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Peng, HY,Li, YF,Lin, WN,et al. Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation[J]. SCIENTIFIC REPORTS,2012,2. |
| APA | Peng, HY,Li, YF,Lin, WN,Wang, YZ,Gao,&Wu, T.(2012).Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.SCIENTIFIC REPORTS,2. |
| MLA | Peng, HY,et al."Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation".SCIENTIFIC REPORTS 2(2012). |
入库方式： OAI收割
来源：上海应用物理研究所
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