中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing

文献类型:期刊论文

作者Koseva, R ; Monch, I ; Meier, D ; Schumann, J ; Arndt, KF ; Schultz, L ; Zhao, B ; Schmidt, OG
刊名THIN SOLID FILMS
出版日期2012
卷号520期号:17
ISSN号0040-6090
英文摘要Bismuth thin films were grown on oxidized Si substrates by electron beam evaporation. The films showed clear tendency to form hillocks inducing large surface roughness. The evolution of hillocks with film thickness and deposition rate was studied. In order to improve the surface quality of the Bi films a nanoscale mechanical polishing was performed. Upon polishing. hillocks-free Bi thin films were obtained without influencing the crystalline structure and the resistivity of the films. The achieved film surface quality allows to prepare high quality Bi Hall probes with an active area down to the nm(2) range promising for advanced device performance. (C) 2012 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000305770200018
公开日期2013-12-05
源URL[http://ir.sinap.ac.cn/handle/331007/13156]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式
GB/T 7714
Koseva, R,Monch, I,Meier, D,et al. Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing[J]. THIN SOLID FILMS,2012,520(17).
APA Koseva, R.,Monch, I.,Meier, D.,Schumann, J.,Arndt, KF.,...&Schmidt, OG.(2012).Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing.THIN SOLID FILMS,520(17).
MLA Koseva, R,et al."Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing".THIN SOLID FILMS 520.17(2012).

入库方式: OAI收割

来源:上海应用物理研究所

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