Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability
文献类型：期刊论文
| 作者 | Dong, SH ; Zhang, HT ; Yang, L ; Bai, ML ; Yao, Y ; Chen, HL ; Gan, L ; Yang, TY(杨铁莹） ; Jiang, H ; Hou, SM ; Wan, LJ ; Guo, XF |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2012 |
| 卷号 | 24期号:41 |
| ISSN号 | 0935-9648 |
| 英文摘要 | Molecular engineering and chemical self-assembly are combined with materials fabrication to achieve air-stable solution-processable oligothiophene-based field-effect transistors with mobilities up to 6.2 cm(2) V-1 s(-1), which ranks as the highest among oliogthiophene- based semiconducting materials. |
| 语种 | 英语 |
| WOS记录号 | WOS:000310545200009 |
| 公开日期 | 2013-12-05 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/13293]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Dong, SH,Zhang, HT,Yang, L,et al. Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability[J]. ADVANCED MATERIALS,2012,24(41). |
| APA | Dong, SH.,Zhang, HT.,Yang, L.,Bai, ML.,Yao, Y.,...&Guo, XF.(2012).Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability.ADVANCED MATERIALS,24(41). |
| MLA | Dong, SH,et al."Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability".ADVANCED MATERIALS 24.41(2012). |
入库方式： OAI收割
来源：上海应用物理研究所
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