The QE numerical simulation of PEA semiconductor photocathode
文献类型：期刊论文
| 作者 | Li, XD(李旭东) ; Gu, Q(顾强) ; Zhang, M(张猛) ; Zhao, MH(赵明华) |
| 刊名 | CHINESE PHYSICS C
 |
| 出版日期 | 2012 |
| 卷号 | 36期号:6 |
| ISSN号 | 1674-1137 |
| 英文摘要 | Several kinds of models have already been proposed to explain the photoemission process. The exact photoemission theory of the semiconductor photocathode was not well established after decades of research. In this paper an integral equation of quantum efficiency (QE) is constructed to describe the photoemission of positive electron affinity (PEA) of the semiconductor photocathode based on the three-step photoemission model. Various factors (e.g., forbidden band gap, electron affinity, photon energy, incident, angle, degree of polarization, refractive index, extinction coefficient, initial and final electron energy, relaxation time, external electric field and so on) have an impact on the QE of the PEA semiconductor photocathode, which are entirely expressed in the QE equation. In addition, a simulation code is also programmed to calculate the QE of the K2CsSb photocathode theoretically at 532 nm wavelength. By and large, the result is in line with the expected experimental value. The reasons leading to the distinction between the experimental and theoretical QE are discussed. |
| 语种 | 英语 |
| WOS记录号 | WOS:000305035000009 |
| 公开日期 | 2013-12-05 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/13322]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Li, XD,Gu, Q,Zhang, M,et al. The QE numerical simulation of PEA semiconductor photocathode[J]. CHINESE PHYSICS C,2012,36(6). |
| APA | Li, XD,Gu, Q,Zhang, M,&Zhao, MH.(2012).The QE numerical simulation of PEA semiconductor photocathode.CHINESE PHYSICS C,36(6). |
| MLA | Li, XD,et al."The QE numerical simulation of PEA semiconductor photocathode".CHINESE PHYSICS C 36.6(2012). |
入库方式： OAI收割
来源：上海应用物理研究所
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