Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis
文献类型：期刊论文
| 作者 | Han, Xiuxun1,2 ; Hwang, Jong-Ha3; Kojima, Nobuaki3; Ohshita, Yoshio3; Yamaguchi, Masafumi3
|
| 刊名 | Semiconductor Science and Technology
 |
| 出版日期 | 2012 |
| 卷号 | 27期号:10页码:105013(1-6) |
| ISSN号 | 0268-1242 |
| 通讯作者 | 韩修训 |
| 英文摘要 | To explore the origin of low conversion efficiency of GaAsN solar cells, the effects from a key deep level (E1) at about 0.3–0.4 eV below the conduction band and interface states between the GaAsN emitter and GaAs front surface field layer were investigated by numerical simulation. Our results show that a high deep level concentration in GaAsN layers and a large interface recombination velocity are necessary to fit the experimental data. Interface recombination plays an important role in reducing the quantum efficiency in the short-wavelength region. Its effect can be weakened by applying a thin emitter and a high doping level in the GaAs surface field layer. The abundant existence of E1 is responsible for the high contribution of Shockley–Read–Hall recombination from the space-charged region. Its density should be reduced to <1015 cm−3 for higher conversion efficiency. |
| 学科主题 | 材料科学与物理化学 |
| 收录类别 | SCI |
| 资助信息 | the ‘Top Hundred Talents Program’ of Chinese Academy of Sciences;the New Energy Development Organization (NEDO)under theministry of Economy, Trade and Industry, Japan |
| 语种 | 英语 |
| WOS记录号 | WOS:000309111800015 |
| 公开日期 | 2013-12-17 |
| 源URL | [http://210.77.64.217/handle/362003/4752]  |
| 专题 | 兰州化学物理研究所_清洁能源化学与材料实验室 兰州化学物理研究所_固体润滑国家重点实验室 |
| 作者单位 | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 3.Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan |
| 推荐引用方式 GB/T 7714 | Han, Xiuxun,Hwang, Jong-Ha,Kojima, Nobuaki,et al. Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis[J]. Semiconductor Science and Technology,2012,27(10):105013(1-6). |
| APA | Han, Xiuxun,Hwang, Jong-Ha,Kojima, Nobuaki,Ohshita, Yoshio,&Yamaguchi, Masafumi.(2012).Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis.Semiconductor Science and Technology,27(10),105013(1-6). |
| MLA | Han, Xiuxun,et al."Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis".Semiconductor Science and Technology 27.10(2012):105013(1-6). |
入库方式： OAI收割
来源：兰州化学物理研究所
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