Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers
文献类型：期刊论文
| 作者 | Zhang HZ ; Cao HT ; Chen AH ; Liang LY ; Liu ZM ; Wan Q |
| 出版日期 | 2010 |
| 公开日期 | 2010-06-09 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/351]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Zhang HZ,Cao HT,Chen AH,et al. Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers[J],2010. |
| APA | Zhang HZ,Cao HT,Chen AH,Liang LY,Liu ZM,&Wan Q.(2010).Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers.. |
| MLA | Zhang HZ,et al."Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers".(2010). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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