modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors
文献类型：期刊论文
| 作者 | Dai MZ ; Wu GD ; Yang Y ; Huang J ; Li L ; Gong J ; Wan Q |
| 出版日期 | 2011 |
| 公开日期 | 2011-05-10 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/1388]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Dai MZ,Wu GD,Yang Y,et al. modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors[J],2011. |
| APA | Dai MZ.,Wu GD.,Yang Y.,Huang J.,Li L.,...&Wan Q.(2011).modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors.. |
| MLA | Dai MZ,et al."modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors".(2011). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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