中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors

文献类型:期刊论文

作者Liu FH ; Xu GJ ; Duan L ; Li YL ; Cui P
刊名Key Engineering Materials
出版日期2008
期号368-372页码:497-499
关键词ZnO varistors Boron oxide Non-linear
合作状况国内
中文摘要B2O3 doped ZnO-Bi2O3-Sb2O3-based varistors were fabricated by conventional solid state reaction method. The structure and electrical properties were investigated by XRD, SEM and electrical measurements. The grain size obviously increases with increasing B2O3 content, while the content of Zn7Sb2O12 spinel on the grain boundaries gradually decreases, which implies that B2O3 doping inhibits the growth of Zn7Sb2O12 spinel. The density (ρ) of ZnO varistors increases with increasing B2O3 content (x) and reaches the maximum at x = 0.4 mol%. The sample with x ≈ 0.6 mol%sintered at 1150℃ exhibits the best performance, with nonlinear coefficient of 48 and leakage current of 4 µA.
收录类别SCI
语种英语
公开日期2009-12-21
源URL[http://ir.nimte.ac.cn/handle/174433/75]  
专题宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式
GB/T 7714
Liu FH,Xu GJ,Duan L,et al. Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors[J]. Key Engineering Materials,2008(368-372):497-499.
APA Liu FH,Xu GJ,Duan L,Li YL,&Cui P.(2008).Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors.Key Engineering Materials(368-372),497-499.
MLA Liu FH,et al."Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors".Key Engineering Materials .368-372(2008):497-499.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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