Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors
文献类型:期刊论文
作者 | Liu FH ; Xu GJ ; Duan L ; Li YL ; Cui P |
刊名 | Key Engineering Materials
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出版日期 | 2008 |
期号 | 368-372页码:497-499 |
关键词 | ZnO varistors Boron oxide Non-linear |
合作状况 | 国内 |
中文摘要 | B2O3 doped ZnO-Bi2O3-Sb2O3-based varistors were fabricated by conventional solid state reaction method. The structure and electrical properties were investigated by XRD, SEM and electrical measurements. The grain size obviously increases with increasing B2O3 content, while the content of Zn7Sb2O12 spinel on the grain boundaries gradually decreases, which implies that B2O3 doping inhibits the growth of Zn7Sb2O12 spinel. The density (ρ) of ZnO varistors increases with increasing B2O3 content (x) and reaches the maximum at x = 0.4 mol%. The sample with x ≈ 0.6 mol%sintered at 1150℃ exhibits the best performance, with nonlinear coefficient of 48 and leakage current of 4 µA. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2009-12-21 |
源URL | [http://ir.nimte.ac.cn/handle/174433/75] ![]() |
专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
推荐引用方式 GB/T 7714 | Liu FH,Xu GJ,Duan L,et al. Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors[J]. Key Engineering Materials,2008(368-372):497-499. |
APA | Liu FH,Xu GJ,Duan L,Li YL,&Cui P.(2008).Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors.Key Engineering Materials(368-372),497-499. |
MLA | Liu FH,et al."Effect of B2O3 doping on the Microstructure and Electrical Properties of ZnO-based Varistors".Key Engineering Materials .368-372(2008):497-499. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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