Nonvolatile resistive switching memory based on amorphous carbon
文献类型：期刊论文
| 作者 | Zhuge F ; Dai W ; He CL ; Wang AY ; Liu YW ; Li M ; Wu YH ; Cui P ; Li RW |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 期号 | 16 |
| 合作状况 | 其它 |
| 中文摘要 | Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. [Nano Lett. 8, 3345 (2008)]. Compared to nanostructures, hydrogenated amorphous carbon (a-C: H) has much more controllable preparation processes. Study on a-C: H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in metal/a-C: H/Pt structures with device yield 90%, ON/OFF ratio > 100, and retention time > 10(5) s. Detailed analysis indicates that the resistive switching originates from the formation/rupture of metal filaments due to the diffusion of the top electrodes under a bias voltage. (C) 2010 American Institute of Physics. [doi:10.1063/1.3406121 |
| 收录类别 | 其它 |
| 语种 | 中文 |
| 公开日期 | 2010-05-27 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/303]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Zhuge F,Dai W,He CL,et al. Nonvolatile resistive switching memory based on amorphous carbon[J]. APPLIED PHYSICS LETTERS,2010(16). |
| APA | Zhuge F.,Dai W.,He CL.,Wang AY.,Liu YW.,...&Li RW.(2010).Nonvolatile resistive switching memory based on amorphous carbon.APPLIED PHYSICS LETTERS(16). |
| MLA | Zhuge F,et al."Nonvolatile resistive switching memory based on amorphous carbon".APPLIED PHYSICS LETTERS .16(2010). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。