structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications
文献类型：期刊论文
| 作者 | Liu Zhimin ; Liang Lingyan ; Yu Zheng ; He Shikun ; Ye Xiaojuan ; Sun Xilian ; Sun Aihua ; Cao Hongtao |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2011 |
| 卷号 | 44期号:15页码:- |
| 关键词 | Dielectric materials |
| ISSN号 | 0022-3727 |
| 学科主题 | Physics, Applied |
| 收录类别 | 其它 |
| 语种 | 英语 |
| 公开日期 | 2011-05-10 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/1396]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Liu Zhimin,Liang Lingyan,Yu Zheng,et al. structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(15):-. |
| APA | Liu Zhimin.,Liang Lingyan.,Yu Zheng.,He Shikun.,Ye Xiaojuan.,...&Cao Hongtao.(2011).structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(15),-. |
| MLA | Liu Zhimin,et al."structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.15(2011):-. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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