Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage
文献类型：期刊论文
| 作者 | Wan Q(万青) ; Jia Sun, Jie Jiang, Aixia Lu, Wei Dou, Bin Zhou, and Qing Wan |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2012-01-25 |
| 卷号 | 66期号:2页码:380—384 |
| 通讯作者 | 万青 |
| 合作状况 | 李雨桐 |
| 中文摘要 | Oxide-based thin-film transistors (TFTs) with a lateral in-plane electrode are self-assembled on paper substrates, and the electrical modulation effect of the in-plane electrode is investigated. A SiO2-based solid-electrolyte film with high specific capacitance is used as the gate dielectric, and the operation voltage is reduced to less than 2.0 V. The threshold voltage (Vth) of such paper TFTs is tuned from ？0.98 to 0.94 V by different voltage biases on the in-plane electrode. The threshold voltage shift (ΔVth) can be described byΔVth = ？(CG2/CG1)VG2, where CG2 and CG1 are the in-plane electrode and bottom-gate specific capacitance values. High electrical performance with a current on/off ratio of 6 × 105 ～ 106, a subthreshold swing of 0.14 ～ 0.19 V/dec, and a mobility of 8.64 ～ 9.45 cm2/V · s is obtained at different in-plane electrode voltage biases. Such low-voltage paper TFTs are promising for low-cost and portable electronics. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9547]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wan Q,Jia Sun, Jie Jiang, Aixia Lu, Wei Dou, Bin Zhou, and Qing Wan. Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage[J]. IEEE ELECTRON DEVICE LETTERS,2012,66(2):380—384. |
| APA | Wan Q,&Jia Sun, Jie Jiang, Aixia Lu, Wei Dou, Bin Zhou, and Qing Wan.(2012).Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage.IEEE ELECTRON DEVICE LETTERS,66(2),380—384. |
| MLA | Wan Q,et al."Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage".IEEE ELECTRON DEVICE LETTERS 66.2(2012):380—384. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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