Grown-in precipitates in heavily phosphorus-doped Czochralski silicon
文献类型：期刊论文
| 作者 | Deren Yang ; Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Weijie Song, Weiyan Wang et al. |
| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2012-02-09 |
| 卷号 | 100页码:033520-1—033520-4 |
| 通讯作者 | Deren Yang |
| 合作状况 | 李雨桐 |
| 中文摘要 | Through comparing the oxygen precipitation in the heavily and lightly phosphorus (P)-doped Czochralski silicon (CZ Si) specimens subjected to the simulated cooling processes of silicon ingot, we researched the influences of heavily P doping on grown-in precipitates by preferential etching and transmission electron microscopy (TEM). It was found that grown-in recipitates were more significant in heavily P-doped CZ Si than in lightly one. Most grown-in precipitates in heavily P-doped CZ Si were generated at (800–600) C. The significant grown-in oxygen precipitates in the heavily P-doped CZ Si would change the density and morphology of oxygen precipitation. TEM examination revealed that the grown-in precipitates in heavily P-doped CZ Si were amorphous oxygen precipitates composed of tiny precipitates in essential. Although more or less phosphorus may be incorporated in the grown-in precipitates, however, phosphorus cannot be detected so far. We further confirmed that extending annealing at 550 C produced significant silicon phosphide (SiP) precipitation in heavily P-doped CZ Si. Summarily, enhancement of grown-in oxygen precipitates was attributed to SiP precipitation and high-concentration vacancy, tentatively. Nonetheless, further investigation on the essential of grown-in precipitates in heavily P-doped CZ Si is worthy. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9553]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Deren Yang,Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Weijie Song, Weiyan Wang et al.. Grown-in precipitates in heavily phosphorus-doped Czochralski silicon[J]. JOURNAL OF APPLIED PHYSICS,2012,100:033520-1—033520-4. |
| APA | Deren Yang,&Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Weijie Song, Weiyan Wang et al..(2012).Grown-in precipitates in heavily phosphorus-doped Czochralski silicon.JOURNAL OF APPLIED PHYSICS,100,033520-1—033520-4. |
| MLA | Deren Yang,et al."Grown-in precipitates in heavily phosphorus-doped Czochralski silicon".JOURNAL OF APPLIED PHYSICS 100(2012):033520-1—033520-4. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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