Mechanism for resistive switching in an oxide-based electrochemical metallization memory
文献类型：期刊论文
| 作者 | 李润伟、诸葛飞 ; Shanshan Peng, Fei Zhuge,a) Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Lia |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012-02-13 |
| 卷号 | 111页码:072101-1—072101-4 |
| 通讯作者 | 李润伟、诸葛飞 |
| 合作状况 | 李雨桐 |
| 中文摘要 | A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and rejuvenation occur at the ZnO/Pt (or AZO) interface, i.e., the cathodic interface. Therefore, the filament is most likely to have a conical shape, with wider and narrower diameters formed at the anodic and cathodic interfaces, respectively. It is inferred that the filament growth starts at the anode surface and stops at the cathode surface. Our results indicate that oxide-based ECM cells strongly differ from sulfide- and selenide-based ones in the resistive switching mechanism. VC 2012 American Institute of Physics. |
| 学科主题 | 磁电子材料与器件 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9555]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | 李润伟、诸葛飞,Shanshan Peng, Fei Zhuge,a) Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Lia. Mechanism for resistive switching in an oxide-based electrochemical metallization memory[J]. APPLIED PHYSICS LETTERS,2012,111:072101-1—072101-4. |
| APA | 李润伟、诸葛飞,&Shanshan Peng, Fei Zhuge,a) Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Lia.(2012).Mechanism for resistive switching in an oxide-based electrochemical metallization memory.APPLIED PHYSICS LETTERS,111,072101-1—072101-4. |
| MLA | 李润伟、诸葛飞,et al."Mechanism for resistive switching in an oxide-based electrochemical metallization memory".APPLIED PHYSICS LETTERS 111(2012):072101-1—072101-4. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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