Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thin-film-transistors
文献类型：期刊论文
| 作者 | Dai MZ(戴明志) ; Mingzhi Daia) and Wangying Xu |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012-03-14 |
| 卷号 | 100期号:100页码:113506-1—113506-3 |
| 通讯作者 | 戴明志 |
| 合作状况 | 李雨桐 |
| 中文摘要 | The polarization mechanism of oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) is not well understood. In this letter, a frequency-dependent circuit model for the oxide-based EDL TFTs is given. In addition, a quasi-EDL model is proposed to explain the conduction mechanism of this kind of EDL TFTs quantitatively. According to this model, in order to ensure an equivalent field-effect mobility up to 1.0 cm2/V s, the minimum ITO channel thickness is 8.5 nm for the self-assembled indium-tin-oxide (ITO)-based EDL TFTs. With the circuit model and the quasi-EDL model, our results may contribute to improved control of oxide-based TFTs. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9583]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Dai MZ,Mingzhi Daia) and Wangying Xu. Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thin-film-transistors[J]. APPLIED PHYSICS LETTERS,2012,100(100):113506-1—113506-3. |
| APA | Dai MZ,&Mingzhi Daia) and Wangying Xu.(2012).Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thin-film-transistors.APPLIED PHYSICS LETTERS,100(100),113506-1—113506-3. |
| MLA | Dai MZ,et al."Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thin-film-transistors".APPLIED PHYSICS LETTERS 100.100(2012):113506-1—113506-3. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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