Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant？
文献类型：期刊论文
| 作者 | 李润伟、诸葛飞 ; Benlin Hu,ab Fei Zhuge,*ab Xiaojian Zhu,ab Shanshan Peng,ab Xinxin Chen,ab Liang Pan,ab Qing Yanab and Run-Wei Li*ab |
| 刊名 | Journal of Materials Chemistry
 |
| 出版日期 | 2012-03-23 |
| 卷号 | 111页码:520—526 |
| 通讯作者 | 李润伟、诸葛飞 |
| 合作状况 | 李雨桐 |
| 中文摘要 | A new polyimide bearing the functional pendant 9-phenyl-9H-carbazole moieties, poly[2,2-(4,40-di(Nbenzyloxycarbazole)-3,30-biphenylene)propane-hexafluoroisopropylidenediphthalimide] (6F-BAHPPCPI), has been designed as a functional material for resistance memory devices. The ITO/6F-BAHPPC PI/Ag memory device exhibits nonvolatile resistive switching (RS) with a high ON/OFF ratio(>106), long retention time (>6 104 s), good endurance, and low power consumption ( 100 mW).In situ conductive atomic force microscopy measurements show that the RS of 6F-BAHP-PC PI originates from the formation/rupture of nanoscale conducting filaments. |
| 学科主题 | 磁电子材料与器件 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9588]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | 李润伟、诸葛飞,Benlin Hu,ab Fei Zhuge,*ab Xiaojian Zhu,ab Shanshan Peng,ab Xinxin Chen,ab Liang Pan,ab Qing Yanab and Run-Wei Li*ab. Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant？[J]. Journal of Materials Chemistry,2012,111:520—526. |
| APA | 李润伟、诸葛飞,&Benlin Hu,ab Fei Zhuge,*ab Xiaojian Zhu,ab Shanshan Peng,ab Xinxin Chen,ab Liang Pan,ab Qing Yanab and Run-Wei Li*ab.(2012).Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant？.Journal of Materials Chemistry,111,520—526. |
| MLA | 李润伟、诸葛飞,et al."Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant？".Journal of Materials Chemistry 111(2012):520—526. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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