Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
文献类型：期刊论文
| 作者 | 李润伟、Wei Lu ; Xiaojian Zhu , Wenjing Su , Yiwei Liu , Benlin Hu , Liang Pan , Wei Lu , * Jiandi Zhang , and Run-Wei Li * |
| 刊名 | advanced materials
 |
| 出版日期 | 2012-04-15 |
| 页码 | 01—06 |
| 通讯作者 | 李润伟、Wei Lu |
| 合作状况 | 李雨桐 |
| 中文摘要 | The past half of a century has witnessed the extension of Moore’s law which describes the doubling of transistor density in an integrated circuit every two years or so. [ 1 ] However, traditional charge based fl ash memories now face signifi cant challenges as the transistor size decreases further into nanoregime. [ 2 , 3 ] As one of the most promising candidates for future non-volatile memories, resistive random access memory (RRAM) with a simple sandwiched structure exhibits attractive performance metrics including excellent scaling potential, low power consumption, high speed, and good endurance. [ 4 , 5 ] In many RRAMs, the main working mechanism is believed to be the formation or rupture of nanoscale conductive fi laments embedded in an insulating matrix, thus offering promise of achieving ultra-high density storage due to its nature of nanoscale transport. [ 5 , 6 ] Conducting fi laments have been suggested by some direct or indirect approaches including in-situ transmission electron microscope observations [ 7 , 8 ] and the detection of local enhanced conductivity. [ 9 , 10 ] On the other hand, as the fi lament is reduced to atomic scale size and essentially forms a one-dimensional conduction channel, then, it is natural to expect that quantum size effects, such as quantized conductance, may come into play. [ 11–13 ] Indeed, in solid state electrolyte, it has been demonstrated that storing data at atomic scale with discrete conductance changes in units of quantum conductance is experimentally feasible. [ 14 ] Here, we report the observation of conductance quantization in a number of oxide-based devices, which reveal the formation and rupture of nanoscale conducting fi laments are responsible for the resistance switching process. The conductance quantization behaviors can be well modulated and in turn can lead to multi-level storage for ultrahigh density memory applications. |
| 学科主题 | 磁电子材料与器件 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9601]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | 李润伟、Wei Lu,Xiaojian Zhu , Wenjing Su , Yiwei Liu , Benlin Hu , Liang Pan , Wei Lu , * Jiandi Zhang , and Run-Wei Li *. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory[J]. advanced materials,2012:01—06. |
| APA | 李润伟、Wei Lu,&Xiaojian Zhu , Wenjing Su , Yiwei Liu , Benlin Hu , Liang Pan , Wei Lu , * Jiandi Zhang , and Run-Wei Li *.(2012).Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory.advanced materials,01—06. |
| MLA | 李润伟、Wei Lu,et al."Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory".advanced materials (2012):01—06. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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