Anomalous bias-stress-induced unstable phenomena of InZnO thin-film transistors using Ta2O5 gate dielectric
文献类型：期刊论文
| 作者 | Cao HT(曹鸿涛) ; Wangying Xu, Mingzhi Dai, Lingyan Liang, Zhimin Liu, Xilian Sun, QingWan and Hongtao Cao |
| 刊名 | J PHYS D APPL PHYS
 |
| 出版日期 | 2012-05-01 |
| 期号 | 45页码:205103-1—205103-5 |
| 通讯作者 | 曹鸿涛 |
| 合作状况 | 李雨桐 |
| 中文摘要 | InZnO thin-film transistors using high-κ Ta2O5 gate dielectric are presented and analysed. The large capacitance coupling effect of amorphous Ta2O5 results in fabricated devices with good electrical properties. However, an anomalous negative threshold voltage (Vth) shift under positive bias stress is observed. It is suggested that electron detrapping from the high-κ Ta2O5 dielectric to the gate electrode is responsible for this Vth shift, which is supported both by the logarithmical dependence of the Vth change on the duration of the bias stress and device simulation extracted trapped charges involved. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9610]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Cao HT,Wangying Xu, Mingzhi Dai, Lingyan Liang, Zhimin Liu, Xilian Sun, QingWan and Hongtao Cao. Anomalous bias-stress-induced unstable phenomena of InZnO thin-film transistors using Ta2O5 gate dielectric[J]. J PHYS D APPL PHYS,2012(45):205103-1—205103-5. |
| APA | Cao HT,&Wangying Xu, Mingzhi Dai, Lingyan Liang, Zhimin Liu, Xilian Sun, QingWan and Hongtao Cao.(2012).Anomalous bias-stress-induced unstable phenomena of InZnO thin-film transistors using Ta2O5 gate dielectric.J PHYS D APPL PHYS(45),205103-1—205103-5. |
| MLA | Cao HT,et al."Anomalous bias-stress-induced unstable phenomena of InZnO thin-film transistors using Ta2O5 gate dielectric".J PHYS D APPL PHYS .45(2012):205103-1—205103-5. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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