Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
文献类型：期刊论文
| 作者 | Jong-In Hong,Jin Ho Bang,Yong-Sang Kim ; Ik-Soo Shin,1,a) Jung-Min Kim,2,a) Jun-Ho Jeun,2 Seok-Hyun Yoo,2 Ziyi Ge,3 Jong-In Hong,1,b) Jin Ho Bang,4,b) and Yong-Sang Kim2,3,b) |
| 刊名 | Applied Physics Letter
 |
| 出版日期 | 2012-05-03 |
| 期号 | 100页码:183307-1—183307-4 |
| 通讯作者 | Jong-In Hong,Jin Ho Bang,Yong-Sang Kim |
| 合作状况 | 李雨桐 |
| 中文摘要 | An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 104 s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9612]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Jong-In Hong,Jin Ho Bang,Yong-Sang Kim,Ik-Soo Shin,1,a) Jung-Min Kim,2,a) Jun-Ho Jeun,2 Seok-Hyun Yoo,2 Ziyi Ge,3 Jong-In Hong,1,b) Jin Ho Bang,4,b) and Yong-Sang Kim2,3,b). Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction[J]. Applied Physics Letter,2012(100):183307-1—183307-4. |
| APA | Jong-In Hong,Jin Ho Bang,Yong-Sang Kim,&Ik-Soo Shin,1,a) Jung-Min Kim,2,a) Jun-Ho Jeun,2 Seok-Hyun Yoo,2 Ziyi Ge,3 Jong-In Hong,1,b) Jin Ho Bang,4,b) and Yong-Sang Kim2,3,b).(2012).Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction.Applied Physics Letter(100),183307-1—183307-4. |
| MLA | Jong-In Hong,Jin Ho Bang,Yong-Sang Kim,et al."Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction".Applied Physics Letter .100(2012):183307-1—183307-4. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。