Resistive switching effects in oxide sandwiched structures
文献类型：期刊论文
| 作者 | Li RW(李润伟) ; Xiao-Jian ZHU1,2, Jie SHANG1,2, and Run-Wei LI (✉)1,2 |
| 刊名 | Front. Mater. Sci.
 |
| 出版日期 | 2012-05-24 |
| 卷号 | 14页码:1—24 |
| 通讯作者 | 李润伟 |
| 合作状况 | 李雨桐 |
| 中文摘要 | Resistive switching (RS) behaviors have attracted great interest due to their promising potential for the data storage. Among various materials, oxide-based devices appear to be more advantageous considering their handy fabrication and compatibility with CMOS technology, though the underlying mechanism is still controversial due to the diversity of RS behaviors. In this review, we focus on the oxide-based RS memories, in which the working mechanism can be understood basically according to a so-called filament model. The filaments formation/rupture processes, approaches developed to detect and characterize filaments, several effective attempts to improve the performances of RS and the quantum conductance behaviors in oxide-based resistive random access memory (RRAM) devices are addressed, respectively |
| 学科主题 | 磁电子材料与器件组 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9621]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Li RW,Xiao-Jian ZHU1,2, Jie SHANG1,2, and Run-Wei LI . Resistive switching effects in oxide sandwiched structures[J]. Front. Mater. Sci.,2012,14:1—24. |
| APA | Li RW,&Xiao-Jian ZHU1,2, Jie SHANG1,2, and Run-Wei LI .(2012).Resistive switching effects in oxide sandwiched structures.Front. Mater. Sci.,14,1—24. |
| MLA | Li RW,et al."Resistive switching effects in oxide sandwiched structures".Front. Mater. Sci. 14(2012):1—24. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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