Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors
文献类型：期刊论文
| 作者 | Wan Q(万青) ; Huixuan Liuab and Qing Wan*ab |
| 刊名 | Nanoscale
 |
| 出版日期 | 2012-06-13 |
| 期号 | 4页码:4481—4484 |
| 通讯作者 | 万青 |
| 合作状况 | 李雨桐 |
| 中文摘要 | Recently, a bioprotonic field-effect transistor with chitosan nanowire channel was demonstrated [Nat. Commun., 2011, 2, 476].Here, it is interesting to find that solution-processed chitosan films with a large electric-double-layer (EDL) specific capacitance can also be used as the gate dielectrics for low-voltage individual SnO2 nanowire transistors. The field-effect electron mobility, current on/off ratio and sub-threshold slope of such a hybrid SnO2 nanowire device is estimated to be 128 cm2 V 1 s 1, 2.3 104 and 90 mV per decade, respectively. Such low-voltage nanowire EDL transistors gated by chitosan-based proton conductors are promising for nanosensors and bioelectronics. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9634]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wan Q,Huixuan Liuab and Qing Wan*ab. Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors[J]. Nanoscale,2012(4):4481—4484. |
| APA | Wan Q,&Huixuan Liuab and Qing Wan*ab.(2012).Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors.Nanoscale(4),4481—4484. |
| MLA | Wan Q,et al."Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors".Nanoscale .4(2012):4481—4484. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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