Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layeron the performance of nonvolatile organic memory device
文献类型：期刊论文
| 作者 | Jin Ho Bang，Yong-Sang Kim ; Jung-Min Kim a,1, Ik-Soo Shin b,1, Seok-Hyun Yoo a, Jun-Ho Jeun a, Jihee Lee c, Ayoung Kim c, Han-Soo Kim d, Ziyi Ge e, Jong-In Hong b, Jin Ho Bang c,⇑, Yong-Sang Kim a,f,⇑ |
| 刊名 | Microelectronic Engineering
 |
| 出版日期 | 2012-07-24 |
| 卷号 | 41期号:98页码:305—308 |
| 通讯作者 | Jin Ho Bang，Yong-Sang Kim |
| 合作状况 | 李雨桐 |
| 中文摘要 | Organic memory devices based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) insulating layer are demonstrated. The use of NPs/polymer blend as a tunneling layer for nonvolatile organic memory has proven to be an alternative route to manipulate and improve the device characteristics. The memory effect is adjustable upon changing the concentration of CdSe NPs within the PMMA tunneling insulator, and the tunable device performance is ascribed to the different trap densities in floating gate. The capacitance change is analyzed by monitoring the charge transport between pentacene and the CdSe NPs. Our in-depth study reveals that the increase in CdSe NPs leads to a wider memory window and better hysteresis characteristics with a maximum window of 8.6 V at VGS of 30 V for 1 s. This result demonstrates the potential application of organic/inorganic hybrid floating gate structure in organic memory devices. |
| 学科主题 | 物理化学 |
| 原文出处 | 其他国内刊物 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9667]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Jin Ho Bang，Yong-Sang Kim,Jung-Min Kim a,1, Ik-Soo Shin b,1, Seok-Hyun Yoo a, Jun-Ho Jeun a, Jihee Lee c, Ayoung Kim c, Han-Soo Kim d, Ziyi Ge e, Jong-In Hong b, Jin Ho Bang c,⇑, Yong-Sang Kim a,f,⇑. Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layeron the performance of nonvolatile organic memory device[J]. Microelectronic Engineering,2012,41(98):305—308. |
| APA | Jin Ho Bang，Yong-Sang Kim,&Jung-Min Kim a,1, Ik-Soo Shin b,1, Seok-Hyun Yoo a, Jun-Ho Jeun a, Jihee Lee c, Ayoung Kim c, Han-Soo Kim d, Ziyi Ge e, Jong-In Hong b, Jin Ho Bang c,⇑, Yong-Sang Kim a,f,⇑.(2012).Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layeron the performance of nonvolatile organic memory device.Microelectronic Engineering,41(98),305—308. |
| MLA | Jin Ho Bang，Yong-Sang Kim,et al."Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layeron the performance of nonvolatile organic memory device".Microelectronic Engineering 41.98(2012):305—308. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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