In-Plane-Gate Transparent SnO2 Nanowire Transistors
文献类型：期刊论文
| 作者 | Wan Q(万青) ; Huixuan Liu and Qing Wan |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2012-10-02 |
| 期号 | 11页码:1625—1627 |
| 通讯作者 | 万青 |
| 合作状况 | 李雨桐 |
| 中文摘要 | In-plane-gate transparent SnO2 nanowire transistors gated by SnO2-based solid electrolytes are fabricated on glass substrate at room temperature. Low-voltage (1.0 V) operation of such device is realized due to the large electric-double-layer capacitance of 0.75 μF/cm2 at 20 Hz. The subthreshold slope, current on/off ratio, and field-effect mobility of the in-plane-gate transparent nanowire transistors are estimated to be 92 mV/decade,> 105, and 106.8 cm2/V · s, respectively. Such low-voltage in-plane-gate transparent nanowire transistors are promising for portable invisible sensors. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9712]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wan Q,Huixuan Liu and Qing Wan. In-Plane-Gate Transparent SnO2 Nanowire Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2012(11):1625—1627. |
| APA | Wan Q,&Huixuan Liu and Qing Wan.(2012).In-Plane-Gate Transparent SnO2 Nanowire Transistors.IEEE ELECTRON DEVICE LETTERS(11),1625—1627. |
| MLA | Wan Q,et al."In-Plane-Gate Transparent SnO2 Nanowire Transistors".IEEE ELECTRON DEVICE LETTERS .11(2012):1625—1627. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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