Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films
文献类型:期刊论文
作者 | Wan Q(万青) ; Li Qiang Zhu, Xiang Li, Zhong Hui Yan, Hong Liang Zhang, and Qing Wan |
刊名 | IEEE ELECTRON DEVICE LETTERS
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出版日期 | 2012-10-26 |
期号 | 12页码:1753—1755 |
通讯作者 | 万青 |
合作状况 | 李雨桐 |
中文摘要 | Surface antireflectance and passivation properties of the Al2O3 films deposited on Czochralski Si wafers by atomic layer deposition (ALD) are investigated. Textured Si with 100-nm Al2O3 shows a very low average reflectance of ~2.8%. Both pand n-type Si wafers are well passivated by Al2O3 films. The maximal minority carrier lifetimes are improved from ~10 μs before Al2O3 passivation to above 3 ms for both p- and n-type Si after Al2O3 film deposition and annealing at an appropriate temperature. Hence, an ALD-deposited Al2O3 film shows the dual function of antireflectance and surface passivation for solar cell applications. |
学科主题 | 物理化学 |
原文出处 | SCI收录 |
公开日期 | 2013-12-16 |
源URL | [http://ir.nimte.ac.cn/handle/174433/9728] ![]() |
专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
推荐引用方式 GB/T 7714 | Wan Q,Li Qiang Zhu, Xiang Li, Zhong Hui Yan, Hong Liang Zhang, and Qing Wan. Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films[J]. IEEE ELECTRON DEVICE LETTERS,2012(12):1753—1755. |
APA | Wan Q,&Li Qiang Zhu, Xiang Li, Zhong Hui Yan, Hong Liang Zhang, and Qing Wan.(2012).Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films.IEEE ELECTRON DEVICE LETTERS(12),1753—1755. |
MLA | Wan Q,et al."Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films".IEEE ELECTRON DEVICE LETTERS .12(2012):1753—1755. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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