中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films

文献类型:期刊论文

作者Wan Q(万青) ; Li Qiang Zhu, Xiang Li, Zhong Hui Yan, Hong Liang Zhang, and Qing Wan
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2012-10-26
期号12页码:1753—1755
通讯作者万青
合作状况李雨桐
中文摘要Surface antireflectance and passivation properties of the Al2O3 films deposited on Czochralski Si wafers by atomic layer deposition (ALD) are investigated. Textured Si with 100-nm Al2O3 shows a very low average reflectance of ~2.8%. Both pand n-type Si wafers are well passivated by Al2O3 films. The maximal minority carrier lifetimes are improved from ~10 μs before Al2O3 passivation to above 3 ms for both p- and n-type Si after Al2O3 film deposition and annealing at an appropriate temperature. Hence, an ALD-deposited Al2O3 film shows the dual function of antireflectance and surface passivation for solar cell applications.
学科主题物理化学
原文出处SCI收录
公开日期2013-12-16
源URL[http://ir.nimte.ac.cn/handle/174433/9728]  
专题宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式
GB/T 7714
Wan Q,Li Qiang Zhu, Xiang Li, Zhong Hui Yan, Hong Liang Zhang, and Qing Wan. Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films[J]. IEEE ELECTRON DEVICE LETTERS,2012(12):1753—1755.
APA Wan Q,&Li Qiang Zhu, Xiang Li, Zhong Hui Yan, Hong Liang Zhang, and Qing Wan.(2012).Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films.IEEE ELECTRON DEVICE LETTERS(12),1753—1755.
MLA Wan Q,et al."Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films".IEEE ELECTRON DEVICE LETTERS .12(2012):1753—1755.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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