中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function

文献类型:期刊论文

作者Wan Q(万青) ; Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana)
刊名Applied Physics Letters
出版日期2013-01-28
卷号90期号:4页码:043501-1—043501-4
通讯作者万青
合作状况李雨桐
中文摘要Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.
学科主题物理化学
原文出处SCI收录
公开日期2013-12-16
源URL[http://ir.nimte.ac.cn/handle/174433/9790]  
专题宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式
GB/T 7714
Wan Q,Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana). Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function[J]. Applied Physics Letters,2013,90(4):043501-1—043501-4.
APA Wan Q,&Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana).(2013).Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function.Applied Physics Letters,90(4),043501-1—043501-4.
MLA Wan Q,et al."Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function".Applied Physics Letters 90.4(2013):043501-1—043501-4.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。