Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function
文献类型:期刊论文
作者 | Wan Q(万青) ; Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana) |
刊名 | Applied Physics Letters |
出版日期 | 2013-01-28 |
卷号 | 90期号:4页码:043501-1—043501-4 |
通讯作者 | 万青 |
合作状况 | 李雨桐 |
中文摘要 | Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost. |
学科主题 | 物理化学 |
原文出处 | SCI收录 |
公开日期 | 2013-12-16 |
源URL | [http://ir.nimte.ac.cn/handle/174433/9790] |
专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
推荐引用方式 GB/T 7714 | Wan Q,Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana). Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function[J]. Applied Physics Letters,2013,90(4):043501-1—043501-4. |
APA | Wan Q,&Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana).(2013).Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function.Applied Physics Letters,90(4),043501-1—043501-4. |
MLA | Wan Q,et al."Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function".Applied Physics Letters 90.4(2013):043501-1—043501-4. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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