Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films
文献类型：期刊论文
| 作者 | Song WJ(宋伟杰) ; Junjun Huanga, Yuheng Zenga, Ruiqin Tanb, Weiyan Wanga, Ye Yanga, Ning Daia, Weijie Songa,∗ |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2013-04-01 |
| 期号 | 1页码:428—431 |
| 通讯作者 | 宋伟杰 |
| 合作状况 | 李雨桐 |
| 中文摘要 | In this work, silicon-rich SiO2 (SRSO) thin films were deposited at different substrate temperatures (Ts) and then annealed by rapid thermal annealing to form SiO2-matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of Ts on the micro-structure and electrical properties of the SiO2-matrix borondoped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO2-matrix boron-doped Si-NC thin films both increased significantly when the Ts was increased from room temperature to 373 K. When the Ts was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10？3 S/cm to 5.5 × 10？5 S/cm. The changes in micro-structure and dark conductivity of the SiO2-matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si O4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal Ts, which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO2-matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, Ts. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9869]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Song WJ,Junjun Huanga, Yuheng Zenga, Ruiqin Tanb, Weiyan Wanga, Ye Yanga, Ning Daia, Weijie Songa,∗. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films[J]. Applied Surface Science,2013(1):428—431. |
| APA | Song WJ,&Junjun Huanga, Yuheng Zenga, Ruiqin Tanb, Weiyan Wanga, Ye Yanga, Ning Daia, Weijie Songa,∗.(2013).Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films.Applied Surface Science(1),428—431. |
| MLA | Song WJ,et al."Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films".Applied Surface Science .1(2013):428—431. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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