Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets
文献类型：期刊论文
| 作者 | Wang WY(王维燕) ; Weiyan Wang • Jinhua Huang • Wei Xu • Junjun Huang • Yuheng Zeng • Weijie Song |
| 刊名 | Journal of Materials Science: Materials in Electronics
 |
| 出版日期 | 2013-06-01 |
| 卷号 | 1946期号:6页码:2122—2127 |
| 通讯作者 | 王维燕 |
| 合作状况 | 李雨桐 |
| 中文摘要 | The boron(B)- and phosphorous(P)-doped microcrystalline silicon (Si) thin films were prepared by magnetron sputtering of heavily B- and P-doped Si targets followed by rapid thermal annealing (RTA), their electrical properties were characterized by temperature-dependent Hall and resistivity measurements. It was observed that the dark conductivity and carrier concentration of the 260 nm B-doped Si films annealed at 1,100 C in Arwere 3.4 S cm-1 and 1.6 9 1019 cm-3, respectively, which were about one order of magnitude higher than that of P-doped Si films. The activation energy of the B- and P-doped Si films were determined to be 0.23 eV and 0.79 eV, respectively. The dark conductivity of B- and P-doped Si films increased with the increase of film thickness, RTA temperature, and the incorporation of H2 in Ar during RTA. The present work provides an easy and non-toxic method for the preparation of doped microcrystalline Si thin films. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9933]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wang WY,Weiyan Wang • Jinhua Huang • Wei Xu • Junjun Huang • Yuheng Zeng • Weijie Song. Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets[J]. Journal of Materials Science: Materials in Electronics,2013,1946(6):2122—2127. |
| APA | Wang WY,&Weiyan Wang • Jinhua Huang • Wei Xu • Junjun Huang • Yuheng Zeng • Weijie Song.(2013).Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets.Journal of Materials Science: Materials in Electronics,1946(6),2122—2127. |
| MLA | Wang WY,et al."Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets".Journal of Materials Science: Materials in Electronics 1946.6(2013):2122—2127. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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