Transparent Junctionless Thin-Film Transistors With Tunable Operation Mode
文献类型：期刊论文
| 作者 | Wan Q(万青) ; Gengming Zhang, Qing Wan, Jia Sun, Guodong Wu, and Liqiang Zhu |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2013-06-09 |
| 卷号 | 49期号:2页码:265—267 |
| 通讯作者 | 万青 |
| 合作状况 | 李雨桐 |
| 中文摘要 | Junctionless low-voltage transparent indium-zincoxide (IZO) thin-film transistors (TFTs) gated by SiO2-based solid electrolyte films are fabricated on glass substrates by a full room-temperature process. The attractive feature of such TFTs is that the channel and source/drain electrodes are the same ultrathin IZO film without any source/drain electrodes. The operation mode of such devices can be tuned from depletion mode to enhancement mode when the thickness of the IZO film is reduced from 30 to 10 nm. Devices operated in both modes show a small subthreshold swing of < 120 mV/dec and a large current on/off ratio of > 106. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9936]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wan Q,Gengming Zhang, Qing Wan, Jia Sun, Guodong Wu, and Liqiang Zhu. Transparent Junctionless Thin-Film Transistors With Tunable Operation Mode[J]. IEEE Electron Device Letters,2013,49(2):265—267. |
| APA | Wan Q,&Gengming Zhang, Qing Wan, Jia Sun, Guodong Wu, and Liqiang Zhu.(2013).Transparent Junctionless Thin-Film Transistors With Tunable Operation Mode.IEEE Electron Device Letters,49(2),265—267. |
| MLA | Wan Q,et al."Transparent Junctionless Thin-Film Transistors With Tunable Operation Mode".IEEE Electron Device Letters 49.2(2013):265—267. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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