Self-Assembled Dual In-Plane Gate Thin-Film Transistors Gated by Nanogranular SiO2 Proton Conductors for Logic Applications
文献类型：期刊论文
| 作者 | Wan Q(万青) ; Li Qiang Zhu, Jia Sun, Guo Dong Wu, Hong Liang Zhang and Qing Wan* |
| 刊名 | Nanoscale
 |
| 出版日期 | 2013-06-30 |
| 卷号 | 31期号:5页码:1980—1985 |
| 通讯作者 | 万青 |
| 合作状况 | 李雨桐 |
| 中文摘要 | Phosphorus (P)-doped nanogranular SiO2 films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of 5.6 10 4 S cm 1 is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO2/indiumzinc- oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >107. Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO2 shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications. |
| 学科主题 | 物理化学 |
| 原文出处 | 其他国内刊物 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9951]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wan Q,Li Qiang Zhu, Jia Sun, Guo Dong Wu, Hong Liang Zhang and Qing Wan*. Self-Assembled Dual In-Plane Gate Thin-Film Transistors Gated by Nanogranular SiO2 Proton Conductors for Logic Applications[J]. Nanoscale,2013,31(5):1980—1985. |
| APA | Wan Q,&Li Qiang Zhu, Jia Sun, Guo Dong Wu, Hong Liang Zhang and Qing Wan*.(2013).Self-Assembled Dual In-Plane Gate Thin-Film Transistors Gated by Nanogranular SiO2 Proton Conductors for Logic Applications.Nanoscale,31(5),1980—1985. |
| MLA | Wan Q,et al."Self-Assembled Dual In-Plane Gate Thin-Film Transistors Gated by Nanogranular SiO2 Proton Conductors for Logic Applications".Nanoscale 31.5(2013):1980—1985. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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