Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si
文献类型：期刊论文
| 作者 | Rui-Qin Tan ; Xiao-Li Zhai • Rui-Qin Tan • Shi-Xun Dai • Wei-Yan Wang • Jin-Hua Huang • Wei-Jie Song |
| 刊名 | Journal of Materials Science: Materials in Electronics
 |
| 出版日期 | 2013-07-01 |
| 卷号 | 62期号:7页码:2379—2384 |
| 通讯作者 | Rui-Qin Tan |
| 合作状况 | 李雨桐 |
| 中文摘要 | The effects of annealing methods on the crystallization process and microstructure of polycrystalline silicon (poly-Si) films obtained by aluminum-induced crystallization (AIC) of amorphous Si (a-Si) films were comparatively investigated. Glass/Al/a-Si structures were annealed by rapid thermal annealing (RTA) and conventional furnace at 500 C for different times in Ar. As compared to furnace annealing, AIC of a-Si films annealed by RTA possesses a shorter period of nucleation time, a higher nucleation density and reduces the process time to form continuous poly-Si films. It is revealed that the continuous Si films obtained by both RTA and conventional furnace annealing are polycrystalline in nature, exhibiting good microstructures with Raman peaks at 518 cm-1 and full-width at half-maximums of 6.43–6.48 cm-1. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/9958]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Rui-Qin Tan,Xiao-Li Zhai • Rui-Qin Tan • Shi-Xun Dai • Wei-Yan Wang • Jin-Hua Huang • Wei-Jie Song. Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si[J]. Journal of Materials Science: Materials in Electronics,2013,62(7):2379—2384. |
| APA | Rui-Qin Tan,&Xiao-Li Zhai • Rui-Qin Tan • Shi-Xun Dai • Wei-Yan Wang • Jin-Hua Huang • Wei-Jie Song.(2013).Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si.Journal of Materials Science: Materials in Electronics,62(7),2379—2384. |
| MLA | Rui-Qin Tan,et al."Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si".Journal of Materials Science: Materials in Electronics 62.7(2013):2379—2384. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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