Memory and Learning Behaviors Mimicked in Nanogranular SiO2-based Proton Conductor Gated Oxide-Based Synaptic Transistors
文献类型：期刊论文
| 作者 | Wan Q(万青) ; Chang Jin Wan,ab Li Qiang Zhu,a Ju Mei Zhou,a Yi Shib and Qing Wan*ab |
| 刊名 | Nanoscale
 |
| 出版日期 | 2013-08-26 |
| 卷号 | 98期号:21页码:13194—13199 |
| 通讯作者 | 万青 |
| 合作状况 | 李雨桐 |
| 中文摘要 | In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus- doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/10016]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wan Q,Chang Jin Wan,ab Li Qiang Zhu,a Ju Mei Zhou,a Yi Shib and Qing Wan*ab. Memory and Learning Behaviors Mimicked in Nanogranular SiO2-based Proton Conductor Gated Oxide-Based Synaptic Transistors[J]. Nanoscale,2013,98(21):13194—13199. |
| APA | Wan Q,&Chang Jin Wan,ab Li Qiang Zhu,a Ju Mei Zhou,a Yi Shib and Qing Wan*ab.(2013).Memory and Learning Behaviors Mimicked in Nanogranular SiO2-based Proton Conductor Gated Oxide-Based Synaptic Transistors.Nanoscale,98(21),13194—13199. |
| MLA | Wan Q,et al."Memory and Learning Behaviors Mimicked in Nanogranular SiO2-based Proton Conductor Gated Oxide-Based Synaptic Transistors".Nanoscale 98.21(2013):13194—13199. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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